Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-40EPF12-M3 DIODE GP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division	231	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	40A	1.4 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
1N5806USE3 DIODE GEN PURP 150V 1A D-5A Microchip Technology	148	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	150 V	1A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
VS-HFA08PB120-N3 DIODE GP 1.2KV 8A TO247AC Vishay General Semiconductor - Diodes Division	500	RFQ	Datasheet	HEXFRED®	TO-247-2	Tube	Active	Standard	1200 V	8A	3.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	10 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
STPSC10H12WL DIODE SIL CARB 1.2KV 10A DO247 STMicroelectronics	244	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	-	-	Through Hole	DO-247	-40°C ~ 175°C
VS-25FR40 DIODE GEN PURP 400V 25A DO203AA Vishay General Semiconductor - Diodes Division	101	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
CDLL5819 DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	144	RFQ	Datasheet	-	DO-213AB, MELF	Bulk	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AB	-65°C ~ 125°C
STPSC10H12DY DIODE SIL CARB 1.2KV 10A TO220AC STMicroelectronics	125	RFQ	Datasheet	ECOPACK®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
1N5617US DIODE GEN PURP 400V 1A D-5A Microchip Technology	608	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	35pF @ 12V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
VS-60APU02-N3 DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	438	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	200 V	60A	1.08 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	28 ns	50 µA @ 200 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
SCS210AJTLL DIODE SIL CARB 650V 10A TO263AB Rohm Semiconductor	1,249	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)
STTH6012W DIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics	4,917	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	60A	2.25 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	30 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
GD20MPS12A DIODE SIL CARB 1.2KV 42A TO220-2 GeneSiC Semiconductor	2,307	RFQ	Datasheet	SiC Schottky MPS™	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	42A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	737pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-65EPF12LHM3 DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division	140	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	65A	1.42 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
FFSP10120A DIODE SIL CARB 1.2KV 10A TO220L onsemi	689	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
JANTX1N5804 DIODE GEN PURP 100V 1A AXIAL Microchip Technology	148	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	100 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
1N5711-1 DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	836	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
VS-40HF10 DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	102	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
SCS205KGC17 DIODE SIC 1.2KV 5A TO220ACFP Rohm Semiconductor	740	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	270pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
DPG60I400HA DIODE GEN PURP 400V 60A TO247 IXYS	284	RFQ	Datasheet	HiPerFRED™	TO-247-2	Tube	Active	Standard	400 V	60A	1.47 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	1 µA @ 400 V	-	-	-	Through Hole	TO-247	-55°C ~ 175°C
C3D08065I DIODE SIL CARB 650V 16.5A TO220 Wolfspeed, Inc.	178	RFQ	Datasheet	Z-Rec®	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16.5A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	441pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2 Isolated Tab	-55°C ~ 175°C

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Single Diodes Electronic Components

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