Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC20065D DIODE SIL CARB 650V 20A TO220AC STMicroelectronics	975	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
IDH16G65C5XKSA2 DIODE SIL CARB 650V 16A TO220-1 Infineon Technologies	1,984	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-1N3890R DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division	181	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
1N5553 DIODE GEN PURP 800V 3A AXIAL Microchip Technology	251	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	800 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
FFSD10120A DIODE SIL CARBIDE 1.2KV TO252AA onsemi	1,706	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	-	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Surface Mount	TO-252AA	-
1N5551US DIODE GEN PURP 400V 3A D-5B Microchip Technology	165	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	400 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	-	-	Surface Mount	D-5B	-65°C ~ 175°C
IDH12SG60CXKSA2 DIODE SIL CARB 600V 12A TO220-1 Infineon Technologies	396	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	12A	2.1 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-3C20ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	788	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	845pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STPSC20065DI DIODE SIC 650V 20A TO220AC INS STMicroelectronics	599	RFQ	Datasheet	ECOPACK®2	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
MSC030SDA070B DIODE SIL CARBIDE 700V 60A TO247 Microchip Technology	118	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	60A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	1200pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
DSP45-18A DIODE GEN PURP 1.8KV 45A TO247 IXYS	5,823	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1800 V	45A	1.26 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1800 V	18pF @ 400V, 1MHz	-	-	Through Hole	TO-247 (IXTH)	-40°C ~ 175°C
FFSP3065B DIODE SIL CARB 650V 30A TO220-2 onsemi	1,216	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-40EPF02-M3 DIODE GP 200V 40A TO247AC Vishay General Semiconductor - Diodes Division	466	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	200 V	40A	1.25 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
IDH16G120C5XKSA1 DIODE SIL CARB 1.2KV 16A TO220-1 Infineon Technologies	243	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	16A	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
C3D16065A DIODE SIL CARB 650V 39A TO220-2 Wolfspeed, Inc.	1,048	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	39A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	95 µA @ 650 V	878pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-80APS08-M3 DIODE GEN PURP 800V 80A TO247AC Vishay General Semiconductor - Diodes Division	1,237	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	800 V	80A	1.17 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
DSEI60-10A DIODE GEN PURP 1KV 60A TO247AD IXYS	287	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 mA @ 1000 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
S4D20120H DIODE SIL CARB 1.2KV 20A TO247AC SMC Diode Solutions	300	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	721pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
IDK16G120C5XTMA1 DIODE SIL CARB 1.2KV 40A TO263-1 Infineon Technologies	437	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	40A	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	-	80 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
SCS215AJTLL DIODE SIL CARB 650V 15A TO263AB Rohm Semiconductor	3,996	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)

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Single Diodes Electronic Components

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