Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
C6D06065G DIODE SIL CARB 650V 23A TO263-2 Wolfspeed, Inc.	1,121	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	23A	1.4 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	393pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
C6D06065A DIODE SIL CARB 650V 24A TO220-2 Wolfspeed, Inc.	773	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	24A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	394pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IDW75E60FKSA1 DIODE GP 600V 120A TO247-3-1 Infineon Technologies	454	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	120A	2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	121 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C
VS-8EWF02S-M3 DIODE GEN PURP 200V 8A DPAK Vishay General Semiconductor - Diodes Division	879	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	Standard	200 V	8A	1.2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	100 µA @ 200 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
DHG10I1800PA DIODE GEN PURP 1.8KV 10A TO220AC IXYS	225	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1800 V	10A	2.23 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	50 µA @ 1800 V	3pF @ 900V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
DUR30120 DIODE GEN PURP 1.2KV 30A TO220AB Littelfuse Inc.	884	RFQ	Datasheet	DUR	TO-220-3	Tube	Active	Standard	1200 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
STPSC6H065DI DIODE SIC 650V 6A TO220AC INS STMicroelectronics	800	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 650 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
STBR3012WY DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	146	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
STTH30L06WY DIODE GEN PURP 600V 30A DO247 STMicroelectronics	374	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
STTH3012W DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	720	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	30A	2.25 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
C3D04065A DIODE SIL CARB 650V 13.5A TO220 Wolfspeed, Inc.	1,184	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	13.5A	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	251pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STTH61W04SW DIODE GEN PURP 400V 60A TO247 STMicroelectronics	270	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	400 V	60A	1.35 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	20 µA @ 400 V	-	-	-	Through Hole	TO-247	175°C (Max)
IDDD08G65C6XTMA1 DIODE SIL CARB 650V 24A HDSOP-10 Infineon Technologies	1,875	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	24A	-	No Recovery Time > 500mA (Io)	0 ns	27 µA @ 420 V	401pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
STPSC10065D DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	538	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC10065DLF DIODE SIL CARB 650V 10A PWRFLAT STMicroelectronics	2,074	RFQ	Datasheet	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
VS-E5PH7506L-N3 DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division	303	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	75A	1.7 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	57 ns	25 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-65EPS12L-M3 DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division	578	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	65A	1.12 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
UJ3D06520TS DIODE SIL CARB 650V 20A TO220-2 Qorvo	6,004	RFQ	Datasheet	Gen-III	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	654pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC5H12D DIODE SIL CARB 1.2KV 5A TO220AC STMicroelectronics	2,772	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	450pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STTH31AC06SWL DIODE GEN PURP 600V 30A TO247 STMicroelectronics	187	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247	-40°C ~ 175°C

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Single Diodes Electronic Components

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