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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
C6D10065G Wolfspeed, Inc. electronic component

C6D10065G

DIODE SIL CARB 650V 36A TO263-2

Wolfspeed, Inc.

253
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 650 V 36A 1.4 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 611pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
FFSP2065B-F085 onsemi electronic component

FFSP2065B-F085

DIODE SIL CARB 650V 20A TO220-2

onsemi

660
RFQ

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
DSA1-18D IXYS electronic component

DSA1-18D

DIODE AVALANCHE 1.8KV 2.3A

IXYS

262
RFQ

Datasheet

- Radial Bulk Active Avalanche 1800 V 2.3A 1.34 V @ 7 A Standard Recovery >500ns, > 200mA (Io) - 700 µA @ 1800 V - - - Through Hole - -40°C ~ 150°C
FFSD2065B onsemi electronic component

FFSD2065B

DIODE SIL CARB 650V 23.4A DPAK

onsemi

1,771
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 23.4A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
IDK10G120C5XTMA1 Infineon Technologies electronic component

IDK10G120C5XTMA1

DIODE SIC 1.2KV 31.9A TO263-1

Infineon Technologies

835
RFQ

Datasheet

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 31.9A 1.8 V @ 10 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 525pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
DSEI30-12A IXYS electronic component

DSEI30-12A

DIODE GEN PURP 1.2KV 26A TO247AD

IXYS

205
RFQ

Datasheet

- TO-247-2 Tube Active Standard 1200 V 26A 2.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 750 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
IDW12G65C5XKSA1 Infineon Technologies electronic component

IDW12G65C5XKSA1

DIODE SIL CARB 650V 12A TO247-3

Infineon Technologies

268
RFQ

Datasheet

CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 650 V 360pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
IDH12G65C5XKSA2 Infineon Technologies electronic component

IDH12G65C5XKSA2

DIODE SIL CARB 650V 12A TO220-1

Infineon Technologies

850
RFQ

Datasheet

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 650 V 360pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
STPSC15H12D STMicroelectronics electronic component

STPSC15H12D

DIODE SIL CARB 1.2KV 15A TO220AC

STMicroelectronics

2,768
RFQ

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 1200 V 1200pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
1N5806E3 Microchip Technology electronic component

1N5806E3

DIODE GEN PURP 150V 1A A AXIAL

Microchip Technology

123
RFQ

Datasheet

- Axial Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
APT60D100BG Microchip Technology electronic component

APT60D100BG

DIODE GEN PURP 1KV 60A TO247

Microchip Technology

839
RFQ

Datasheet

- TO-247-2 Tube Active Standard 1000 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 250 µA @ 1000 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
STBR6012W STMicroelectronics electronic component

STBR6012W

DIODE GEN PURP 1.2KV 60A DO247

STMicroelectronics

516
RFQ

Datasheet

- DO-247-2 (Straight Leads) Tube Active Standard 1200 V 60A 1.3 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V - - - Through Hole DO-247 175°C (Max)
DHG30I1200HA IXYS electronic component

DHG30I1200HA

DIODE GEN PURP 1.2KV 30A TO247

IXYS

300
RFQ

Datasheet

- TO-247-2 Tube Active Standard 1200 V 30A 2.26 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 50 µA @ 1200 V - - - Through Hole TO-247 -55°C ~ 150°C
C3D10065I Wolfspeed, Inc. electronic component

C3D10065I

DIODE SIL CARB 650V 19A TO220-2

Wolfspeed, Inc.

1,325
RFQ

Datasheet

Z-Rec® TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 19A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 480pF @ 0V, 1MHz - - Through Hole TO-220-2 Isolated Tab -55°C ~ 175°C
STTH6012WL STMicroelectronics electronic component

STTH6012WL

DIODE GP 1.2KV 60A DO247 LL

STMicroelectronics

946
RFQ

Datasheet

- TO-247-2 Tube Active Standard 1200 V 60A 2.25 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 30 µA @ 1200 V - - - Through Hole DO-247 LL 175°C
STBR6012WY STMicroelectronics electronic component

STBR6012WY

DIODE GEN PURP 1.2KV 60A DO247

STMicroelectronics

112
RFQ

Datasheet

ECOPACK®2 DO-247-2 (Straight Leads) Tube Active Standard 1200 V 60A 1.3 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V - Automotive AEC-Q101 Through Hole DO-247 -40°C ~ 175°C
STBR6008WY STMicroelectronics electronic component

STBR6008WY

DIODE GEN PURP 800V 60A DO247

STMicroelectronics

510
RFQ

Datasheet

- DO-247-2 (Straight Leads) Tube Active Standard 800 V 60A 1.1 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V - Automotive AEC-Q101 Through Hole DO-247 -40°C ~ 175°C
GD30MPS06H GeneSiC Semiconductor electronic component

GD30MPS06H

DIODE SIL CARB 650V 49A TO247-2

GeneSiC Semiconductor

614
RFQ

Datasheet

SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 49A - No Recovery Time > 500mA (Io) - - 735pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
VS-HFA25PB60-N3 Vishay General Semiconductor - Diodes Division electronic component

VS-HFA25PB60-N3

DIODE GP 600V 25A TO247AC

Vishay General Semiconductor - Diodes Division

385
RFQ

Datasheet

HEXFRED® TO-247-2 Tube Active Standard 600 V 25A 1.7 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 20 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 150°C
IDD10SG60CXTMA2 Infineon Technologies electronic component

IDD10SG60CXTMA2

DIODE SIL CARB 600V 10A TO252-3

Infineon Technologies

217
RFQ

Datasheet

CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 10A 2.1 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 600 V 290pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
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Single Diodes Electronic Components

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Q1: What products are included in Single Diodes?
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