Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-35EPF12LHM3 DIODE GEN PURP 1.2KV 35A TO247AD Vishay General Semiconductor - Diodes Division	169	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	35A	1.47 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
MSC010SDA120B DIODE SIL CARB 1.2KV 10A TO247 Microchip Technology	1,511	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247	-
JAN1N5552 DIODE GEN PURP 600V 3A AXIAL Microchip Technology	152	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
SCS210AGC17 DIODE SIC 650V 10A TO220ACFP Rohm Semiconductor	1,918	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
STTH3006PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	444	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	30A	1.85 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	-	-	Through Hole	DOP3I	175°C (Max)
VS-E5PH6012LHN3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	334	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PH6012L-N3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	113	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
S4D08120E DIODE SIL CARBIDE 1.2KV 8A DPAK SMC Diode Solutions	2,606	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 1200 V	560pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
SCS206AGC17 DIODE SIL CARB 650V 6A TO220ACFP Rohm Semiconductor	638	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
VS-E5PX6012L-N3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	165	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	60A	3.15 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
1N5619 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	301	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	25pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
VS-40EPS08-M3 DIODE GP 800V 40A TO247AC Vishay General Semiconductor - Diodes Division	678	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	800 V	40A	1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-65PQ015-N3 DIODE SCHOTTKY 15V 65A TO247AC Vishay General Semiconductor - Diodes Division	103	RFQ	Datasheet	-	TO-247-3	Tube	Active	Schottky	15 V	65A	500 mV @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	-	18 mA @ 15 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 125°C
VS-E5PH7512L-N3 DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division	3,490	RFQ	Datasheet	FRED Pt® Gen 5	TO-247-2	Tube	Active	Standard	1200 V	75A	2.6 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	145 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
RRD20TJ10SGC9 DIODE GEN PURP 1KV 20A TO220ACFP Rohm Semiconductor	219	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1000 V	20A	1.05 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	-	-	Through Hole	TO-220ACFP	150°C
C3D06065E DIODE SIL CARB 650V 20A TO252-2 Wolfspeed, Inc.	1,387	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	295pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
IDH08SG60CXKSA2 DIODE SIL CARB 600V 8A TO220-2-1 Infineon Technologies	1,662	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	8A	2.1 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 600 V	240pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-30EPF12-M3 DIODE GP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division	443	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	1.41 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-30EPF06-M3 DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	500	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	30A	1.41 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
C6D10065G-TR DIODE SIL CARB 650V 36A TO263-2 Wolfspeed, Inc.	1,525	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	36A	1.4 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	611pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C

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Single Diodes Electronic Components

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