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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
S3D50065D1 SMC Diode Solutions electronic component

S3D50065D1

DIODE SIL CARB 650V 112A TO247AD

SMC Diode Solutions

 244
RFQ

Datasheet

 		- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 112A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 3100pF @ 0V, 100MHz - - Through Hole TO-247AD -55°C ~ 175°C
STPSC20065DY STMicroelectronics electronic component

STPSC20065DY

DIODE SIL CARB 650V 20A TO220AC

STMicroelectronics

 498
RFQ

Datasheet

 		ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 600 V 1250pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
VS-HFA16PB120-N3 Vishay General Semiconductor - Diodes Division electronic component

VS-HFA16PB120-N3

DIODE GP 1.2KV 16A TO247AC

Vishay General Semiconductor - Diodes Division

 891
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 1200 V 16A 3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 20 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AC Modified -55°C ~ 150°C
DNA30E2200FE IXYS electronic component

DNA30E2200FE

DIODE GEN PURP 2.2KV 30A I4-PAC

IXYS

 109
RFQ

Datasheet

 		- TO-251-2, IPAK Tube Active Standard 2200 V 30A 1.25 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole i4-PAC -55°C ~ 175°C
FFSH3065B-F085 onsemi electronic component

FFSH3065B-F085

DIODE SIL CARB 650V 37A TO247-2

onsemi

 466
RFQ

Datasheet

 		- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 37A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 1260pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
C6D20065A Wolfspeed, Inc. electronic component

C6D20065A

DIODE SIL CARB 650V 66A TO220-2

Wolfspeed, Inc.

 351
RFQ

Datasheet

 		- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 66A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 1153pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-40HFR120 Vishay General Semiconductor - Diodes Division electronic component

VS-40HFR120

DIODE GEN PURP 1.2KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

 106
RFQ

Datasheet

 		- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
STPSC15H12G2Y-TR STMicroelectronics electronic component

STPSC15H12G2Y-TR

DIODE SIL CARB 1.2KV 15A D2PAK

STMicroelectronics

 931
RFQ

Datasheet

 		ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 1200 V 1200pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
UJ3D1220KSD Qorvo electronic component

UJ3D1220KSD

DIODE SIL CARB 1.2KV 10A TO247-3

Qorvo

 1,188
RFQ

Datasheet

 		- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 220 µA @ 1200 V 1020pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
1N3891 GeneSiC Semiconductor electronic component

1N3891

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

 887
RFQ

Datasheet

 		- DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
VS-60EPF12-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-60EPF12-M3

DIODE GP 1.2KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

 494
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 1200 V 60A 1.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
1N3595US Microchip Technology electronic component

1N3595US

DIODE GEN PURP 4A B SQ-MELF

Microchip Technology

 158
RFQ

Datasheet

 		- SQ-MELF, B Bulk Active Standard - 4A 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs 1 nA @ 125 V - - - Surface Mount B, SQ-MELF -65°C ~ 150°C
DSEP15-12CR IXYS electronic component

DSEP15-12CR

DIODE GP 1.2KV 15A ISOPLUS247

IXYS

 265
RFQ

Datasheet

 		HiPerDynFRED™ TO-247-3 Tube Active Standard 1200 V 15A 4.04 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 100 µA @ 1200 V - - - Through Hole ISOPLUS247™ -55°C ~ 175°C
1N1184 GeneSiC Semiconductor electronic component

1N1184

DIODE GEN PURP 100V 35A DO5

GeneSiC Semiconductor

 191
RFQ

Datasheet

 		- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 35A 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
CDLL5711 Microchip Technology electronic component

CDLL5711

DIODE SCHOTTKY 50V 33MA DO213AA

Microchip Technology

 265
RFQ

Datasheet

 		- DO-213AA Bulk Active Schottky 50 V 33mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 150°C
1N1184A GeneSiC Semiconductor electronic component

1N1184A

DIODE GEN PURP 100V 40A DO5

GeneSiC Semiconductor

 260
RFQ

Datasheet

 		- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1.1 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 200°C
SCS320AJTLL Rohm Semiconductor electronic component

SCS320AJTLL

DIODE SIL CARBIDE 650V 20A LPTL

Rohm Semiconductor

 612
RFQ

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 1000pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
1N5416US Microchip Technology electronic component

1N5416US

DIODE GEN PURP 100V 3A D-5B

Microchip Technology

 111
RFQ

Datasheet

 		- SQ-MELF, E Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - - - Surface Mount D-5B -65°C ~ 175°C
MSC030SDA120B Microchip Technology electronic component

MSC030SDA120B

DIODE SIL CARB 1.2KV 30A TO247

Microchip Technology

 1,046
RFQ

Datasheet

 		- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.5 V @ 30 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
DSEP60-12A IXYS electronic component

DSEP60-12A

DIODE GEN PURP 1.2KV 60A TO247AD

IXYS

 258
RFQ

Datasheet

 		HiPerFRED™ TO-247-2 Tube Active Standard 1200 V 60A 2.66 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 650 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
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Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.

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