Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
UPS840/TR13 DIODE SCHOTTKY 40V 8A POWERMITE3 Microchip Technology	1,835	RFQ	Datasheet	-	Powermite®3	Tape & Reel (TR)	Active	Schottky	40 V	8A	450 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 40 V	-	-	-	Surface Mount	Powermite 3	-55°C ~ 125°C
S4D04120A DIODE SIL CARB 1.2KV 4A TO220AC SMC Diode Solutions	547	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	4A	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	302pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
FFSD0665B-F085 DIODE SIL CARB 650V 9.1A DPAK onsemi	1,948	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	9.1A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
VS-8EWS08STRL-M3 DIODE GEN PURP 800V 8A D-PAK Vishay General Semiconductor - Diodes Division	5,527	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	800 V	8A	1.1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 800 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-55°C ~ 150°C
UCQ30A03-TE24L2 DIODE SCHOTTKY 30V 30A TO263LP KYOCERA AVX	10,325	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	30 V	30A	500 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 30 V	-	-	-	Surface Mount	TO-263LP	-40°C ~ 150°C
VS-E5PW3006LHN3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	1,850	RFQ	Datasheet	FRED Pt® Gen 5	TO-247-2	Tube	Active	Standard	600 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	39 ns	20 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E4PH6006L-N3 DIODE GP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	395	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	68 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 175°C
IDK02G120C5XTMA1 DIODE SIC 1.2KV 11.8A TO263-1 Infineon Technologies	688	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	11.8A	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	-	18 µA @ 1200 V	182pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
VS-8EWS08STR-M3 DIODE GEN PURP 800V 8A D-PAK Vishay General Semiconductor - Diodes Division	1,532	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	800 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 800 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-55°C ~ 150°C
STBR3008G2Y-TR DIODE GEN PURP 800V 30A D2PAK HV STMicroelectronics	422	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	800 V	30A	1.1 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 800 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
IDW40E65D1FKSA1 DIODE GP 650V 80A TO247-3-1 Infineon Technologies	110	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	80A	1.7 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	129 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
VS-EPU6006L-N3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	217	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	1.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	110 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
STBR3012W DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	1,666	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
SDUR6030W DIODE GEN PURP 300V 60A TO247AC SMC Diode Solutions	4,362	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	300 V	60A	1.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 300 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
JANTX1N3595-1 DIODE GEN PURP 125V 150MA DO35 Microchip Technology	174	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Military	MIL-S-19500-241	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
IDH06G65C5XKSA2 DIODE SIL CARB 650V 6A TO220-2-1 Infineon Technologies	1,287	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
1N4245 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	264	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 200 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
VS-E5TX3006S2LHM3 30A, 600V, "X" SERIES GEN 5 FRED Vishay General Semiconductor - Diodes Division	1,566	RFQ	Datasheet	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	41 ns	20 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-45EPS12L-M3 DIODE GEN PURP 1.2KV 45A TO247AD Vishay General Semiconductor - Diodes Division	187	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	45A	1.14 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
VS-APU6006-N3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	486	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C

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Single Diodes Electronic Components

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