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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IXTN21N100 IXYS electronic component

IXTN21N100

MOSFET N-CH 1000V 21A SOT227B

IXYS

6,694
RFQ

-

MegaMOS™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 550mOhm @ 500mA, 10V 4.5V @ 500µA 250 nC @ 10 V ±20V 8400 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT1201R4BFLLG Microchip Technology electronic component

APT1201R4BFLLG

MOSFET N-CH 1200V 9A TO247

Microchip Technology

4,027
RFQ

Datasheet

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 9A (Tc) 10V 1.5Ohm @ 4.5A, 10V 5V @ 1mA 75 nC @ 10 V ±30V 2030 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
IXFK24N100F IXYS electronic component

IXFK24N100F

MOSFET N-CH 1000V 24A TO264

IXYS

6,052
RFQ

-

HiPerRF™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 195 nC @ 10 V ±20V 6600 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA
IXFB52N90P Littelfuse Inc. electronic component

IXFB52N90P

MOSFET N-CH 900V 52A PLUS264

Littelfuse Inc.

8,178
RFQ

Datasheet

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 900 V 52A (Tc) 10V 160mOhm @ 26A, 10V 6.5V @ 1mA 308 nC @ 10 V ±30V 19000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
IXFE48N50QD2 IXYS electronic component

IXFE48N50QD2

MOSFET N-CH 500V 41A SOT-227B

IXYS

4,737
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) 10V 110mOhm @ 24A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 8000 pF @ 25 V - 400W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFE48N50QD3 IXYS electronic component

IXFE48N50QD3

MOSFET N-CH 500V 41A SOT-227B

IXYS

5,150
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) 10V 110mOhm @ 24A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 8000 pF @ 25 V - 400W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
SCTWA70N120G2V-4 STMicroelectronics electronic component

SCTWA70N120G2V-4

DISCRETE

STMicroelectronics

9,541
RFQ

Datasheet

- TO-247-4 Bulk Active N-Channel MOSFET (Metal Oxide) 1200 V 91A (Tc) 18V 30mOhm @ 50A, 18V 4.9V @ 1mA 150 nC @ 18 V +22V, -10V 3540 pF @ 800 V - 547W -55°C ~ 200°C (TJ) - - Through Hole TO-247-4
APT8030LVRG Microchip Technology electronic component

APT8030LVRG

MOSFET N-CH 800V 27A TO264

Microchip Technology

6,255
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) - 300mOhm @ 500mA, 10V 4V @ 2.5mA 510 nC @ 10 V - 7900 pF @ 25 V - - - - - Through Hole TO-264 [L]
APT34F100B2 Microchip Technology electronic component

APT34F100B2

MOSFET N-CH 1000V 35A T-MAX

Microchip Technology

8,652
RFQ

Datasheet

POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 35A (Tc) 10V 380mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT34F100L Microchip Technology electronic component

APT34F100L

MOSFET N-CH 1000V 35A TO264

Microchip Technology

6,495
RFQ

Datasheet

- TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 35A (Tc) 10V 400mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
IXFL30N120P IXYS electronic component

IXFL30N120P

MOSFET N-CH 1200V 18A I5PAK

IXYS

4,520
RFQ

Datasheet

HiPerFET™, Polar ISOPLUSi5-PAK™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) 10V 380mOhm @ 15A, 10V 6.5V @ 1mA 310 nC @ 10 V ±30V 19000 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUSi5-Pak™
IXFE44N50QD2 IXYS electronic component

IXFE44N50QD2

MOSFET N-CH 500V 39A SOT-227B

IXYS

9,114
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 39A (Tc) 10V 120mOhm @ 22A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 8000 pF @ 25 V - 400W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFE44N50QD3 IXYS electronic component

IXFE44N50QD3

MOSFET N-CH 500V 39A SOT-227B

IXYS

6,011
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 39A (Tc) 10V 120mOhm @ 22A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 8000 pF @ 25 V - 400W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXTF6N200P3 IXYS electronic component

IXTF6N200P3

MOSFET N-CH 2000V 4A I4PAC

IXYS

8,712
RFQ

Datasheet

Polar P3™ ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 2000 V 4A (Tc) 10V 4.2Ohm @ 3A, 10V 5V @ 250µA 143 nC @ 10 V ±20V 3700 pF @ 25 V - 215W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
APT50M75B2FLLG Microchip Technology electronic component

APT50M75B2FLLG

MOSFET N-CH 500V 57A T-MAX

Microchip Technology

7,531
RFQ

Datasheet

POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) - 75mOhm @ 28.5A, 10V 5V @ 2.5mA 125 nC @ 10 V - 5590 pF @ 25 V - - - - - Through Hole T-MAX™ [B2]
APT84F50B2 Microchip Technology electronic component

APT84F50B2

MOSFET N-CH 500V 84A T-MAX

Microchip Technology

9,517
RFQ

Datasheet

POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 84A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT10M09LVFRG Microchip Technology electronic component

APT10M09LVFRG

MOSFET N-CH 100V 100A TO264

Microchip Technology

6,995
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) - 9mOhm @ 50A, 10V 4V @ 2.5mA 350 nC @ 10 V - 9875 pF @ 25 V - - - - - Through Hole TO-264 [L]
APT10078SLLG Microchip Technology electronic component

APT10078SLLG

MOSFET N-CH 1000V 14A D3PAK

Microchip Technology

4,423
RFQ

Datasheet

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V ±30V 2525 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
APT8030LVFRG Microchip Technology electronic component

APT8030LVFRG

MOSFET N-CH 800V 27A TO264

Microchip Technology

7,131
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) - 300mOhm @ 500mA, 10V 4V @ 2.5mA 510 nC @ 10 V - 7900 pF @ 25 V - - - - - Through Hole TO-264 [L]
STE139N65M5 STMicroelectronics electronic component

STE139N65M5

MOSFET N-CH 650V 130A ISOTOP

STMicroelectronics

4,387
RFQ

-

MDmesh™ ISOTOP Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 130A (Tc) 10V 17mOhm @ 65A, 10V 5V @ 250µA 363 nC @ 10 V ±25V 15600 pF @ 100 V - 672W (Tc) 150°C (TJ) - - Chassis Mount ISOTOP

FETs, MOSFETs Electronic Components

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