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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MKE38RK600DFEL-TUB IXYS electronic component

MKE38RK600DFEL-TUB

MOSFET N-CH 600V 50A SMPD

IXYS

3,475
RFQ

Datasheet

CoolMOS™ 9-SMD Module Tube Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Surface Mount ISOPLUS-SMPD™.B
IRFPS40N60K Vishay Siliconix electronic component

IRFPS40N60K

MOSFET N-CH 600V 40A SUPER247

Vishay Siliconix

5,081
RFQ

Datasheet

- TO-274AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 24A, 10V 5V @ 250µA 330 nC @ 10 V ±30V 7970 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
APT30M60J Microchip Technology electronic component

APT30M60J

MOSFET N-CH 600V 31A ISOTOP

Microchip Technology

4,983
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 5890 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT70SM70J Microsemi Corporation electronic component

APT70SM70J

SICFET N-CH 700V 49A SOT227

Microsemi Corporation

7,672
RFQ

-

- SOT-227-4, miniBLOC Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 700 V 49A (Tc) 20V 70mOhm @ 32.5A, 20V 2.5V @ 1mA 125 nC @ 20 V +25V, -10V - - 165W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
APT1001R6BFLLG Microchip Technology electronic component

APT1001R6BFLLG

MOSFET N-CH 1000V 8A TO247

Microchip Technology

5,411
RFQ

-

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.6Ohm @ 4A, 10V 5V @ 1mA 55 nC @ 10 V ±30V 1320 pF @ 25 V - 266W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT10045B2FLLG Microchip Technology electronic component

APT10045B2FLLG

MOSFET N-CH 1000V 23A T-MAX

Microchip Technology

2,041
RFQ

Datasheet

POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - - - Through Hole T-MAX™ [B2]
APT10045LFLLG Microchip Technology electronic component

APT10045LFLLG

MOSFET N-CH 1000V 23A TO264

Microchip Technology

7,974
RFQ

Datasheet

POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - - - Through Hole TO-264 [L]
IXFN70N60Q2 IXYS electronic component

IXFN70N60Q2

MOSFET N-CH 600V 70A SOT-227B

IXYS

7,745
RFQ

Datasheet

HiPerFET™, Q2 Class SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 80mOhm @ 35A, 10V 5V @ 8mA 265 nC @ 10 V ±30V 7200 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT6010B2LLG Microchip Technology electronic component

APT6010B2LLG

MOSFET N-CH 600V 54A T-MAX

Microchip Technology

4,802
RFQ

Datasheet

POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 10V 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V ±30V 6710 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
IXTH20N50D IXYS electronic component

IXTH20N50D

MOSFET N-CH 500V 20A TO247

IXYS

6,778
RFQ

Datasheet

Depletion TO-247-3 Tube Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 330mOhm @ 10A, 10V - 125 nC @ 10 V ±30V 2500 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
IXTN660N04T4 IXYS electronic component

IXTN660N04T4

MOSFET N-CH 40V 660A SOT227B

IXYS

9,486
RFQ

Datasheet

Trench SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 660A (Tc) 10V 0.85mOhm @ 100A, 10V 4V @ 250µA 860 nC @ 10 V ±15V 44000 pF @ 25 V - 1040W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B
IXFX44N80Q3 Littelfuse Inc. electronic component

IXFX44N80Q3

MOSFET N-CH 800V 44A PLUS247-3

Littelfuse Inc.

9,094
RFQ

Datasheet

HiPerFET™, Q3 Class TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 6.5V @ 8mA 185 nC @ 10 V ±30V 9840 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
IXFN94N50P2 Littelfuse Inc. electronic component

IXFN94N50P2

MOSFET N-CH 500V 68A SOT227B

Littelfuse Inc.

7,014
RFQ

Datasheet

HiPerFET™, PolarP2™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 68A (Tc) 10V 55mOhm @ 500mA, 10V 5V @ 8mA 220 nC @ 10 V ±30V 13700 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT38F50J Microchip Technology electronic component

APT38F50J

MOSFET N-CH 500V 38A ISOTOP

Microchip Technology

5,786
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 38A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
IXFN32N120 IXYS electronic component

IXFN32N120

MOSFET N-CH 1200V 32A SOT-227B

IXYS

5,892
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Box Not For New Designs N-Channel MOSFET (Metal Oxide) 1200 V 32A - 350mOhm @ 500mA, 10V 5V @ 8mA 400 nC @ 10 V - 15900 pF @ 25 V - - - - - Chassis Mount SOT-227B
IXFK44N80Q3 Littelfuse Inc. electronic component

IXFK44N80Q3

MOSFET N-CH 800V 44A TO264AA

Littelfuse Inc.

2,100
RFQ

Datasheet

HiPerFET™, Q3 Class TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 6.5V @ 8mA 185 nC @ 10 V ±30V 9840 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
APT8024LFLLG Microchip Technology electronic component

APT8024LFLLG

MOSFET N-CH 800V 31A TO264

Microchip Technology

6,826
RFQ

Datasheet

POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 31A (Tc) 10V 260mOhm @ 15.5A, 10V 5V @ 2.5mA 160 nC @ 10 V ±30V 4670 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
IXFE80N50 IXYS electronic component

IXFE80N50

MOSFET N-CH 500V 72A SOT-227B

IXYS

9,829
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 72A (Tc) 10V 55mOhm @ 40A, 10V 4.5V @ 8mA 380 nC @ 10 V ±20V 9890 pF @ 25 V - 580W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT26F120B2 Microchip Technology electronic component

APT26F120B2

MOSFET N-CH 1200V 27A T-MAX

Microchip Technology

2,670
RFQ

Datasheet

- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 27A (Tc) 10V 650mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™
APT26F120L Microchip Technology electronic component

APT26F120L

MOSFET N-CH 1200V 27A TO264

Microchip Technology

5,862
RFQ

Datasheet

- TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 27A (Tc) 10V 650mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]

FETs, MOSFETs Electronic Components

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