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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT66M60B2 Microchip Technology electronic component

APT66M60B2

MOSFET N-CH 600V 70A T-MAX

Microchip Technology

8,017
RFQ

Datasheet

- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 100mOhm @ 33A, 10V 5V @ 2.5mA 330 nC @ 10 V ±30V 13190 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
IXFR20N120P Littelfuse Inc. electronic component

IXFR20N120P

MOSFET N-CH 1200V 13A ISOPLUS247

Littelfuse Inc.

5,525
RFQ

Datasheet

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 13A (Tc) 10V 630mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
APT5010LVFRG Microchip Technology electronic component

APT5010LVFRG

MOSFET N-CH 500V 47A TO264

Microchip Technology

9,571
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - - - Through Hole TO-264 [L]
IXFR14N100Q2 IXYS electronic component

IXFR14N100Q2

MOSFET N-CH 1000V 9.5A ISOPLS247

IXYS

5,281
RFQ

Datasheet

HiPerFET™, Q2 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 9.5A (Tc) 10V 1.1Ohm @ 7A, 10V 5V @ 4mA 83 nC @ 10 V ±30V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
GA04JT17-247 GeneSiC Semiconductor electronic component

GA04JT17-247

TRANS SJT 1700V 4A TO247AB

GeneSiC Semiconductor

3,694
RFQ

-

- TO-247-3 Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 4A (Tc) (95°C) - 480mOhm @ 4A - - - - - 106W (Tc) 175°C (TJ) - - Through Hole TO-247AB
APT6021SFLLG Microchip Technology electronic component

APT6021SFLLG

MOSFET N-CH 600V 29A D3PAK

Microchip Technology

8,626
RFQ

Datasheet

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) - 210mOhm @ 14.5A, 10V 5V @ 1mA 80 nC @ 10 V - 3470 pF @ 25 V - - - - - Surface Mount D3PAK
IPDQ60R015CFD7XTMA1 Infineon Technologies electronic component

IPDQ60R015CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

6,050
RFQ

Datasheet

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 149A (Tc) 10V 15mOhm @ 58.2A, 10V 4.5V @ 2.91mA 251 nC @ 10 V ±20V 9900 pF @ 400 V - 657W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IXFN26N90 IXYS electronic component

IXFN26N90

MOSFET N-CH 900V 26A SOT-227B

IXYS

2,371
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 26A (Tc) 10V 300mOhm @ 13A, 10V 5V @ 8mA 240 nC @ 10 V ±20V 10800 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFT80N085 IXYS electronic component

IXFT80N085

MOSFET N-CH 85V 80A TO268

IXYS

7,706
RFQ

-

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 85 V 80A (Tc) 10V 9mOhm @ 40A, 10V 4V @ 4mA 180 nC @ 10 V ±20V 4800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
IPT65R033G7XTMA1 Infineon Technologies electronic component

IPT65R033G7XTMA1

MOSFET N-CH 650V 69A 8HSOF

Infineon Technologies

5,417
RFQ

Datasheet

CoolMOS™ C7 8-PowerSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) 10V 33mOhm @ 28.9A, 10V 4V @ 1.44mA 110 nC @ 10 V ±20V 5000 pF @ 400 V - 391W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
IXFN48N55 IXYS electronic component

IXFN48N55

MOSFET N-CH 550V 48A SOT-227B

IXYS

9,966
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 550 V 48A (Tc) 10V 110mOhm @ 500mA, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 8900 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT20M22LVRG Microchip Technology electronic component

APT20M22LVRG

MOSFET N-CH 200V 100A TO264

Microchip Technology

7,582
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V ±30V 10200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
IXFN48N50 IXYS electronic component

IXFN48N50

MOSFET N-CH 500V 48A SOT-227B

IXYS

6,013
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 100mOhm @ 500mA, 10V 4V @ 8mA 270 nC @ 10 V ±20V 8400 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT1201R6SVFRG Microchip Technology electronic component

APT1201R6SVFRG

MOSFET N-CH 1200V 8A D3PAK

Microchip Technology

5,317
RFQ

Datasheet

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 8A (Tc) - 1.6Ohm @ 4A, 10V 4V @ 1mA 230 nC @ 10 V - 3660 pF @ 25 V - - - - - Surface Mount D3PAK
IXFR48N60Q3 Littelfuse Inc. electronic component

IXFR48N60Q3

MOSFET N-CH 600V 32A ISOPLUS247

Littelfuse Inc.

6,546
RFQ

Datasheet

HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 154mOhm @ 24A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7020 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
IXFN27N80 IXYS electronic component

IXFN27N80

MOSFET N-CH 800V 27A SOT-227B

IXYS

6,782
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V, 15V 300mOhm @ 13.5A, 10V 4.5V @ 8mA 400 nC @ 10 V ±20V 9740 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
AS1M040120T ANBON SEMICONDUCTOR (INT'L) LIMITED electronic component

AS1M040120T

N-CHANNEL SILICON CARBIDE POWER

ANBON SEMICONDUCTOR (INT'L) LIMITED

1
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 55mOhm @ 40A, 20V 4V @ 10mA 142 nC @ 20 V +25V, -10V 2946 pF @ 1000 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
IXUN280N10 IXYS electronic component

IXUN280N10

MOSFET N-CH 100V 280A SOT-227B

IXYS

4,273
RFQ

-

- SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 280A (Tc) 10V 5mOhm @ 140A, 10V 4V @ 4mA 440 nC @ 10 V ±20V 18000 pF @ 25 V - 770W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFN90N30 IXYS electronic component

IXFN90N30

MOSFET N-CH 300V 90A SOT-227B

IXYS

7,018
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 90A (Tc) 10V 33mOhm @ 45A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 10000 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
TW070J120B,S1Q Toshiba Semiconductor and Storage electronic component

TW070J120B,S1Q

SICFET N-CH 1200V 36A TO3P

Toshiba Semiconductor and Storage

4,273
RFQ

Datasheet

- TO-3P-3, SC-65-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 20V 90mOhm @ 18A, 20V 5.8V @ 20mA 67 nC @ 20 V ±25V, -10V 1680 pF @ 800 V - 272W (Tc) -55°C ~ 175°C - - Through Hole TO-3P(N)

FETs, MOSFETs Electronic Components

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