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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT20M18B2VRG Microchip Technology electronic component

APT20M18B2VRG

MOSFET N-CH 200V 100A T-MAX

Microchip Technology

4,792
RFQ

Datasheet

POWER MOS V® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - - - Through Hole T-MAX™ [B2]
APT20M18LVRG Microchip Technology electronic component

APT20M18LVRG

MOSFET N-CH 200V 100A TO264

Microchip Technology

7,804
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - - - Through Hole TO-264 [L]
FA57SA50LC Vishay General Semiconductor - Diodes Division electronic component

FA57SA50LC

MOSFET N-CH 500V 57A SOT-227

Vishay General Semiconductor - Diodes Division

6,645
RFQ

-

HEXFET® SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) 10V 80mOhm @ 34A, 10V 4V @ 250µA 338 nC @ 10 V ±20V 10000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
IXFL34N100 IXYS electronic component

IXFL34N100

MOSFET N-CH 1000V 30A ISOPLUS264

IXYS

7,816
RFQ

Datasheet

HiPerFET™ TO-264-3, TO-264AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 280mOhm @ 30A, 10V 5V @ 8mA 380 nC @ 10 V ±20V 9200 pF @ 25 V - 550W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS264™
APT10078BFLLG Microchip Technology electronic component

APT10078BFLLG

MOSFET N-CH 1000V 14A TO247

Microchip Technology

9,143
RFQ

Datasheet

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) - 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V - 2525 pF @ 25 V - - - - - Through Hole TO-247 [B]
SICW021N120P4-BP Micro Commercial Co electronic component

SICW021N120P4-BP

SIC MOSFET,TO-247-4L

Micro Commercial Co

4,270
RFQ

Datasheet

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V 29.4mOhm @ 50A, 18V 4.5V @ 17mA 200 nC @ 18 V +18V, -5V 3741 pF @ 800 V - 469W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
IXFN23N100 IXYS electronic component

IXFN23N100

MOSFET N-CH 1000V 23A SOT-227B

IXYS

7,921
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V - 5V @ 8mA - ±20V - - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFB170N30P Littelfuse Inc. electronic component

IXFB170N30P

MOSFET N-CH 300V 170A PLUS264

Littelfuse Inc.

8,795
RFQ

Datasheet

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 170A (Tc) 10V 18mOhm @ 85A, 10V 4.5V @ 1mA 258 nC @ 10 V ±20V 20000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
IXFN34N80 IXYS electronic component

IXFN34N80

MOSFET N-CH 800V 34A SOT-227B

IXYS

2,211
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 240mOhm @ 500mA, 10V 5V @ 8mA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXTH44N25L2 Littelfuse Inc. electronic component

IXTH44N25L2

MOSFET N-CH 250V 44A TO247

Littelfuse Inc.

6,672
RFQ

Datasheet

Linear L2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 75mOhm @ 22A, 10V 4.5V @ 250µA 256 nC @ 10 V ±20V 5740 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
APT60N60SCSG Microchip Technology electronic component

APT60N60SCSG

MOSFET N-CH 600V 60A D3PAK

Microchip Technology

8,727
RFQ

Datasheet

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V - 431W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
APT44F80L Microchip Technology electronic component

APT44F80L

MOSFET N-CH 800V 47A TO264

Microchip Technology

5,618
RFQ

Datasheet

- TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 47A (Tc) 10V 240mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264
IGLD60R070D1AUMA1 Infineon Technologies electronic component

IGLD60R070D1AUMA1

GANFET N-CH 600V 15A LSON-8

Infineon Technologies

7,911
RFQ

Datasheet

CoolGaN™ 8-LDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 15A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-LSON-8-1
IXFL70N60Q2 IXYS electronic component

IXFL70N60Q2

MOSFET N-CH 600V 37A ISOPLUS264

IXYS

4,702
RFQ

-

HiPerFET™, Q2 Class TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 92mOhm @ 35A, 10V 5.5V @ 8mA 265 nC @ 10 V ±30V 12000 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS264™
APT40M70LVRG Microchip Technology electronic component

APT40M70LVRG

MOSFET N-CH 400V 57A TO264

Microchip Technology

5,776
RFQ

-

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 400 V 57A (Tc) 10V 70mOhm @ 28.5A, 10V 4V @ 2.5mA 495 nC @ 10 V ±30V 8890 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
APT37M100B2 Microchip Technology electronic component

APT37M100B2

MOSFET N-CH 1000V 37A T-MAX

Microchip Technology

4,776
RFQ

Datasheet

- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 330mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
IXFE50N50 IXYS electronic component

IXFE50N50

MOSFET N-CH 500V 47A SOT227B

IXYS

4,553
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Box Obsolete N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 100mOhm @ 25A, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 9400 pF @ 25 V - 500W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFN64N50PD2 IXYS electronic component

IXFN64N50PD2

MOSFET N-CH 500V 52A SOT-227B

IXYS

6,436
RFQ

-

PolarHV™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 52A (Tc) 10V 85mOhm @ 32A, 10V 5V @ 8mA 186 nC @ 10 V ±30V 11000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFN48N50U2 IXYS electronic component

IXFN48N50U2

MOSFET N-CH 500V 48A SOT-227B

IXYS

8,523
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 100mOhm @ 500mA, 10V 4V @ 8mA 270 nC @ 10 V ±20V 8400 pF @ 25 V - 520W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFN48N50U3 IXYS electronic component

IXFN48N50U3

MOSFET N-CH 500V 48A SOT-227B

IXYS

5,306
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 100mOhm @ 500mA, 10V 4V @ 8mA 270 nC @ 10 V ±20V 8400 pF @ 25 V - 520W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B

FETs, MOSFETs Electronic Components

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