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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GA20JT12-247 GeneSiC Semiconductor electronic component

GA20JT12-247

TRANS SJT 1200V 20A TO247AB

GeneSiC Semiconductor

6,962
RFQ

Datasheet

- TO-247-3 Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 20A (Tc) - 70mOhm @ 20A - - - - - 282W (Tc) 175°C (TJ) - - Through Hole TO-247AB
GA20JT12-263 GeneSiC Semiconductor electronic component

GA20JT12-263

TRANS SJT 1200V 45A D2PAK

GeneSiC Semiconductor

8,894
RFQ

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 45A (Tc) - 60mOhm @ 20A - - - 3091 pF @ 800 V - 282W (Tc) 175°C (TJ) - - Surface Mount TO-263-7
IRFPS38N60L Vishay Siliconix electronic component

IRFPS38N60L

MOSFET N-CH 600V 38A SUPER247

Vishay Siliconix

5,585
RFQ

Datasheet

- TO-274AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 150mOhm @ 23A, 10V 5V @ 250µA 320 nC @ 10 V ±30V 7990 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
IGT60R070D1ATMA1 Infineon Technologies electronic component

IGT60R070D1ATMA1

GANFET N-CH 600V 31A 8HSOF

Infineon Technologies

7,244
RFQ

Datasheet

CoolGaN™ 8-PowerSFN Tape & Reel (TR) Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-3
APT44F80B2 Microchip Technology electronic component

APT44F80B2

MOSFET N-CH 800V 47A T-MAX

Microchip Technology

9,462
RFQ

Datasheet

POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 800 V 47A (Tc) 10V 210mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT20M22LVFRG Microchip Technology electronic component

APT20M22LVFRG

MOSFET N-CH 200V 100A TO264

Microchip Technology

7,581
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V ±30V 10200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
IXFN140N25T Littelfuse Inc. electronic component

IXFN140N25T

MOSFET N-CH 250V 120A SOT227B

Littelfuse Inc.

7,521
RFQ

Datasheet

HiPerFET™, Trench SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 17mOhm @ 60A, 10V 5V @ 4mA 255 nC @ 10 V ±20V 19000 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
SCT011H75G3AG STMicroelectronics electronic component

SCT011H75G3AG

MOSFET 750 V 110A H2PAK7

STMicroelectronics

4,861
RFQ

Datasheet

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
APT6015LVFRG Microchip Technology electronic component

APT6015LVFRG

MOSFET N-CH 600V 38A TO264

Microchip Technology

7,741
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) - 150mOhm @ 500mA, 10V 4V @ 2.5mA 475 nC @ 10 V - 9000 pF @ 25 V - - - - - Through Hole TO-264 [L]
IXFX26N100P Littelfuse Inc. electronic component

IXFX26N100P

MOSFET N-CH 1000V 26A PLUS247-3

Littelfuse Inc.

6,123
RFQ

Datasheet

HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 390mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
IXFL38N100P Littelfuse Inc. electronic component

IXFL38N100P

MOSFET N-CH 1000V 29A I5PAK

Littelfuse Inc.

5,393
RFQ

Datasheet

HiPerFET™, Polar ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 29A (Tc) 10V 230mOhm @ 19A, 10V 6.5V @ 1mA 350 nC @ 10 V ±30V 24000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUSi5-Pak™
IXFN280N085 IXYS electronic component

IXFN280N085

MOSFET N-CH 85V 280A SOT-227B

IXYS

6,597
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 85 V 280A (Tc) 10V 4.4mOhm @ 100A, 10V 4V @ 8mA 580 nC @ 10 V ±20V 19000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IGOT60R070D1AUMA1 Infineon Technologies electronic component

IGOT60R070D1AUMA1

GANFET N-CH 600V 31A 20DSO

Infineon Technologies

6,804
RFQ

Datasheet

CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Tape & Reel (TR) Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-87
APT20M19JVR Microsemi Corporation electronic component

APT20M19JVR

MOSFET N-CH 200V 112A ISOTOP

Microsemi Corporation

4,231
RFQ

Datasheet

POWER MOS V® SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 112A (Tc) 10V 19mOhm @ 500mA, 10V 4V @ 1mA 495 nC @ 10 V ±30V 11640 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
IXFK26N100P Littelfuse Inc. electronic component

IXFK26N100P

MOSFET N-CH 1000V 26A TO264AA

Littelfuse Inc.

6,744
RFQ

Datasheet

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 390mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
IXFZ140N25T IXYS electronic component

IXFZ140N25T

MOSFET N-CH 250V 100A DE475

IXYS

3,028
RFQ

Datasheet

HiPerFET™, Trench 6-SMD, Flat Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 100A (Tc) 10V 17mOhm @ 60A, 10V 5V @ 4mA 255 nC @ 10 V ±20V 19000 pF @ 25 V - 445W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DE475
VS-FB180SA10P Vishay General Semiconductor - Diodes Division electronic component

VS-FB180SA10P

MOSFET N-CH 100V 180A SOT-227

Vishay General Semiconductor - Diodes Division

8,909
RFQ

Datasheet

- SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.5mOhm @ 180A, 10V 4V @ 250µA 380 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
IXFN110N65X3 Littelfuse Inc. electronic component

IXFN110N65X3

DISCRETE MOSFET 110A 650V X3 SOT

Littelfuse Inc.

9,460
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
IXFX26N120P Littelfuse Inc. electronic component

IXFX26N120P

MOSFET N-CH 1200V 26A PLUS247-3

Littelfuse Inc.

2,572
RFQ

Datasheet

HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 500mOhm @ 13A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 16000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
IXFN32N60 IXYS electronic component

IXFN32N60

MOSFET N-CH 600V 32A SOT227B

IXYS

6,482
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 250mOhm @ 500mA, 10V 4.5V @ 8mA 325 nC @ 10 V ±20V 9000 pF @ 25 V - 520AW (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B

FETs, MOSFETs Electronic Components

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