Hello! Welcome to Raywise Technologies Co.,Limited!
Hello! Welcome to Raywise Technologies Co.,Limited!
BOM Upload
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT1201R4SFLLGMOSFET N-CH 1200V 9A D3PAK |
6,540 |
|
Datasheet |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | - | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
APT6013B2LLGMOSFET N-CH 600V 43A T-MAX |
9,543 |
|
Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | - | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | - | 5630 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
APT6013LLLGMOSFET N-CH 600V 43A TO264 |
2,093 |
|
Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | ±30V | 5630 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
GA10SICP12-263TRANS SJT 1200V 25A D2PAK |
3,835 |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
APT5510JFLLMOSFET N-CH 550V 44A ISOTOP |
2,900 |
|
Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 5V @ 2.5mA | 124 nC @ 10 V | ±30V | 5823 pF @ 25 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
SCTH50N120-7SICFET N-CH 1200V 65A H2PAK-7 |
8,993 |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A | 20V | 69mOhm @ 40A, 20V | 5.1V @ 1mA | 122 nC @ 20 V | +22V, -10V | 1900 pF @ 400 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
.jpg)
|
IXTR210P10TMOSFET P-CH 100V 195A ISOPLUS247 |
2,266 |
|
Datasheet |
TrenchP™ | TO-247-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 195A (Tc) | 10V | 8mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
IXTT4N150HV-TRLMOSFET N-CH 1500V 4A TO268HV |
6,354 |
|
- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 6Ohm @ 2A, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXTT) |
|
|
IXFL40N110PMOSFET N-CH 1100V 21A ISOPLUS264 |
6,970 |
|
Datasheet |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1100 V | 21A (Tc) | 10V | 280mOhm @ 20A, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | - | - | - | - | Through Hole | ISOPLUS264™ |
|
|
APT12080LVRGMOSFET N-CH 1200V 16A TO264 |
5,789 |
|
- |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 800mOhm @ 8A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
|
SCT30N120HSICFET N-CH 1200V 40A H2PAK-2 |
6,036 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.5V @ 1mA | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | - | - | Surface Mount | H2PAK-2 |
|
STE110NS20FDMOSFET N-CH 200V 110A ISOTOP |
2,812 |
|
Datasheet |
MESH OVERLAY™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 110A (Tc) | 10V | 24mOhm @ 50A, 10V | 4V @ 250µA | 504 nC @ 10 V | ±20V | 7900 pF @ 25 V | - | 500W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
IXFN120N60X3DISCRETE MOSFET 120A 600V X3 SOT |
9,951 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
APT56F60B2MOSFET N-CH 600V 60A T-MAX |
7,323 |
|
Datasheet |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
|
GS66516T-TRGS66516T-TR |
4,762 |
|
- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 1.3V @ 14mA | 12.1 nC @ 6 V | +7V, -10V | 520 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
IXFN340N06MOSFET N-CH 60V 340A SOT-227B |
7,843 |
|
Datasheet |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | 4V @ 8mA | 600 nC @ 10 V | ±20V | 16800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFR26N100PMOSFET N-CH 1000V 15A ISOPLUS247 |
6,926 |
|
Datasheet |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 430mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
APT10050LVFRGMOSFET N-CH 1000V 21A TO264 |
9,103 |
|
Datasheet |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
|
APT10050B2VFRGMOSFET N-CH 1000V 21A T-MAX |
6,737 |
|
Datasheet |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
|
IXFN72N55Q2MOSFET N-CH 550V 72A SOT-227B |
4,377 |
|
- |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 72A (Tc) | 10V | 72mOhm @ 500mA, 10V | 5V @ 8mA | 258 nC @ 10 V | ±30V | 10500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
FETs, MOSFETs Electronic Components
Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.