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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
APT10SCD120K Microsemi Corporation electronic component

APT10SCD120K

DIODE SIL CARB 1.2KV 10A TO220

Microsemi Corporation

 297
RFQ

-

 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 -
JANTX1N6640US MACOM Technology Solutions electronic component

JANTX1N6640US

DIODE GEN PURP 50V 300MA D-5D

MACOM Technology Solutions

 181
RFQ

Datasheet

 		- SQ-MELF, D Bulk Discontinued at Digi-Key Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 90 µA @ 50 V - Military MIL-PRF-19500/578 & /609 Surface Mount D-5D -65°C ~ 175°C
STPSC20H12G2-TR STMicroelectronics electronic component

STPSC20H12G2-TR

DIODE SIL CARB 1.2KV 20A D2PAK

STMicroelectronics

 1,000
RFQ

Datasheet

 		ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 1650pF @ 0V, 1MHz - - Surface Mount D2PAK HV -40°C ~ 175°C
FFSH15120A onsemi electronic component

FFSH15120A

DIODE SIL CARB 1.2KV 26A TO247-2

onsemi

 229
RFQ

Datasheet

 		- TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 26A 1.75 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 936pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
FFSH3065ADN-F155 onsemi electronic component

FFSH3065ADN-F155

DIODE SIL CARB 650V 23A TO247-3

onsemi

 447
RFQ

Datasheet

 		- TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 23A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 887pF @ 1V, 100kHz - - Through Hole TO-247-3 -55°C ~ 175°C
LSIC2SD065A20A Littelfuse Inc. electronic component

LSIC2SD065A20A

DIODE SIL CARB 650V 45A TO220-2L

Littelfuse Inc.

 873
RFQ

Datasheet

 		Gen2 TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 45A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 960pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
NDSH30120C-F155 onsemi electronic component

NDSH30120C-F155

SIC DIODE GEN2.0 1200V TO247-2L

onsemi

 326
RFQ

Datasheet

 		- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 38A 1.75 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1961pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
STPSC20H12DY STMicroelectronics electronic component

STPSC20H12DY

DIODE SIL CARB 1.2KV 20A TO220AC

STMicroelectronics

 970
RFQ

Datasheet

 		ECOPACK®2 TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 1650pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
IDH15S120AKSA1 Infineon Technologies electronic component

IDH15S120AKSA1

DIODE SIL CARB 1.2KV 15A TO220-2

Infineon Technologies

 4,906
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 15A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 360 µA @ 1200 V 750pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
ADC4D10120D Analog Power Inc. electronic component

ADC4D10120D

DIODE SIL SIC 1200V 9A TO247-3

Analog Power Inc.

 550
RFQ

Datasheet

 		WBG TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 9A 1.8 V @ 2 A No Recovery Time > 500mA (Io) - 2 µA @ 1200 V 6.3pF @ 0V, 100kHz - - Through Hole TO-247-3 -55°C ~ 175°C
RURU15080 Harris Corporation electronic component

RURU15080

DIODE AVALANCHE 800V 150A TO218

Harris Corporation

 301
RFQ

Datasheet

 		- TO-218-1 Bulk Active Avalanche 800 V 150A 1.9 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 500 µA @ 800 V - - - Chassis Mount TO-218 -65°C ~ 175°C
FFSH4065A onsemi electronic component

FFSH4065A

DIODE SIL CARB 650V 48A TO247-2

onsemi

 551
RFQ

Datasheet

 		- TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 48A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 1989pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
IV1D12015T2 Inventchip electronic component

IV1D12015T2

DIODE SIL CARB 1.2KV 44A TO247-2

Inventchip

 120
RFQ

Datasheet

 		- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 44A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1200 V 888pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
PCDP20120G1_T0_00001 Panjit International Inc. electronic component

PCDP20120G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

 1,993
RFQ

Datasheet

 		- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V 1040pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
FFSH20120A-F155 onsemi electronic component

FFSH20120A-F155

DIODE SIL CARB 1.2KV 30A TO247-2

onsemi

 579
RFQ

Datasheet

 		- TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 30A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
PCDH20120G1_T0_00601 Panjit International Inc. electronic component

PCDH20120G1_T0_00601

1200V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

 1,500
RFQ

Datasheet

 		- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V 1023pF @ 1V, 1MHz - - Through Hole TO-247AD-2 -55°C ~ 175°C
PCDB20120G1_R2_00001 Panjit International Inc. electronic component

PCDB20120G1_R2_00001

1200V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

 2,365
RFQ

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V 1040pF @ 1V, 1MHz - - Surface Mount TO-263 -55°C ~ 175°C
NDSH40120C-F155 onsemi electronic component

NDSH40120C-F155

SIC DIODE GEN2.0 1200V TO247-2L

onsemi

 421
RFQ

Datasheet

 		- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 46A 1.75 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 2840pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
FFSH30120A-F155 onsemi electronic component

FFSH30120A-F155

DIODE SIL CARB 1.2KV 46A TO247-2

onsemi

 353
RFQ

Datasheet

 		- TO-247-2 Tray Active SiC (Silicon Carbide) Schottky 1200 V 46A 1.75 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1740pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
IV1D12020T2 Inventchip electronic component

IV1D12020T2

DIODE SIL CARB 1.2KV 54A TO247-2

Inventchip

 110
RFQ

Datasheet

 		- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 1114pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
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Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.

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