Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
64432119AA LEAD SET IAP MAP SMAP 1SX & 1DX Vishay	303	RFQ	-	-	-	Box	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
LFUSCD10120A DIODE SIL CARB 1.2KV 10A TO220AC Littelfuse Inc.	500	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
S3D30065G DIODE SIL CARBIDE 650V 84A D2PAK SMC Diode Solutions	414	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
LSIC2SD120E15CC DIODE SIC 1.2KV 24.5A TO247AD Littelfuse Inc.	450	RFQ	Datasheet	Gen2	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	24.5A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	454pF @ 1V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
SCS210AGHRC DIODE SIL CARB 650V 10A TO220AC Rohm Semiconductor	792	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
SCS310AMC DIODE SIL CARB 650V 10A TO220FM Rohm Semiconductor	215	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C (Max)
IDW10S120FKSA1 DIODE SIL CARB 1.2KV 10A TO247-3 Infineon Technologies	4,069	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 1200 V	580pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-41	-55°C ~ 175°C
SIC05120B-BP DIODE SIL CARB 1.2KV 5A TO220AC Micro Commercial Co	4,895	RFQ	Datasheet	-	TO-220-2	Tube	Last Time Buy	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	-	3 µA @ 1200 V	353pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
FFSPF2065A DIODE SIC 650V 20A TO220F-2FS onsemi	1,284	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1085pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
PCDP08120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	418pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
NXPSC206506Q DIODE SIL CARB 650V 20A TO220AC WeEn Semiconductors	3,041	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	500 µA @ 650 V	600pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
LSIC2SD065A10A DIODE SIL CARB 650V 27A TO220-2L Littelfuse Inc.	1,006	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	27A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
PCDP2065G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	747pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
CDBJFSC101200-G DIODE SIL CARB 1.2KV 10A TO220F Comchip Technology	553	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Through Hole	TO-220F	-55°C ~ 175°C
WNSC2D30650WQ SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	275	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	980pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
WNSC6D20650WQ DIODE SIL CARB 650V 20A TO247-2 WeEn Semiconductors	484	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.4 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1200pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
PAD100 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	460	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	100 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
FFSH3065A DIODE SIL CARB 650V 26A TO247-2 onsemi	2,045	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	26A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1705pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
S4D30120H2 1200V, 30A, TO-247AC, SIC SCHOTT SMC Diode Solutions	205	RFQ	Datasheet	-	TO-247-2	Tube	Active	Schottky	1200 V	94A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 1200 V	2581pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
PAD50 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	486	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	50 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C

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Single Diodes Electronic Components

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