Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FJH1101 DIODE GEN PURP 15V 150MA DO35 onsemi	3,738	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Standard	15 V	150mA	1.1 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	-	15 pA @ 15 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-35	175°C (Max)
MBRP30035L RECTIFIER, SCHOTTKY, 300A, 35V Motorola	4,920	RFQ	Datasheet	SWITCHMODE™	Module	Bulk	Active	Schottky	35 V	300A	570 mV @ 300 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 35 V	-	-	-	Chassis Mount	POWERTAP II	-55°C ~ 150°C
CD4955D VOLTAGE REGULATOR Microchip Technology	400	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
C6D50065D1 SIC, SCHOTTKY DIODE, 136A, 650V, Wolfspeed, Inc.	575	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	136A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	-	100 µA @ 650 V	2819pF @ 0V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
UES1103 DIODE GEN PURP 150V 2.5A AXIAL Microchip Technology	109	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	150 V	2.5A	975 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 150 V	-	-	-	Through Hole	A, Axial	175°C (Max)
FFSH40120A DIODE SIL CARB 1.2KV 61A TO247-2 onsemi	387	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	61A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2250pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH40120A-F155 1200V 40A SIC SBD onsemi	835	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	61A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2250pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH50120A DIODE SIL CARB 1.2KV 77A TO247-2 onsemi	1,905	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	77A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2560pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
VS-HFA90NH40PBF DIODE GEN PURP 400V 210A D-67 Vishay General Semiconductor - Diodes Division	187	RFQ	Datasheet	HEXFRED®	D-67 HALF-PAK	Bulk	Active	Standard	400 V	210A	1.67 V @ 180 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	2 mA @ 400 V	-	-	-	Chassis Mount	D-67 HALF-PAK	-55°C ~ 150°C
SKR26/16UNF DIODE, DO-4, 1600V, 20A, FWD, ST Semikron	118	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Box	Active	Standard	1600 V	25A	1.55 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	4 mA @ 1600 V	-	-	-	Stud Mount	-	-40°C ~ 180°C
ADE4D20120D DIODE SIL SIC 1200V 33A TO247-3 Analog Power Inc.	500	RFQ	Datasheet	WBG	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	33A	1.85 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 1200 V	12pF @ 0V, 100kHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
RJS6005TDPP-EJ#T2 DIODE SCHOTT 600V 15A TO220FP-2L Renesas Electronics Corporation	3,624	RFQ	Datasheet	-	TO-220-2 Full Pack	Bulk	Active	SiC (Silicon Carbide) Schottky	600 V	15A	1.8 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220FP-2L	-55°C ~ 150°C
1N4307MJTX RECTIFIER DIODE National Semiconductor	1,374	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
JANS1N5809 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	270	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N4500 DIODE GEN PURP 80V DO35 Microchip Technology	1,226	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	80 V	-	1.1 V @ 300 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	100 nA @ 75 V	-	Military	MIL-PRF-19500/403	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JANTX1N4153-1 DIODE GEN PURP 50V 150MA DO204AH Microchip Technology	760	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	50 V	150mA	880 mV @ 20 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	50 nA @ 50 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/337	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JAN1N1184R DIODE GEN PURP 100V 35A DO5 Microchip Technology	100	RFQ	-	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	35A	1.4 V @ 110 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Military	MIL-PRF-19500/297	Stud Mount	DO-5 (DO-203AB)	-65°C ~ 175°C
JAN1N1206A DIODE GEN PURP 600V 12A DO203AA Microchip Technology	75	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	12A	1.35 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	-	Military	MIL-PRF-19500/260	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
JANS1N6640 DIODE GEN PURP 50V 300MA DO204AH Microchip Technology	474	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/609	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JANTXV1N1204AR DIODE GP REV 400V 12A DO203AA Microchip Technology	174	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	12A	1.35 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	-	Military	MIL-PRF-19500/260	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C

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Single Diodes Electronic Components

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