Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
PAD5DFN 8L ROHS DIODE GEN PURP 30V 10MA 8DFN Linear Integrated Systems, Inc.	6,078	RFQ	Datasheet	PAD-DFN	8-VFDFN Exposed Pad	Tape & Reel (TR)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	5 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Surface Mount	8-DFN (2x2)	-55°C ~ 150°C
WNSC6D20650B6J DIODE SIL CARBIDE 650V 20A D2PAK WeEn Semiconductors	4,518	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C
S4D20120G DIODE SIL CARB 1.2KV 20A D2PAK SMC Diode Solutions	388	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	721pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
1N483B DIODE GEN PURP 80V 200MA DO35 Fairchild Semiconductor	12,654	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	80 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 60 V	-	-	-	Through Hole	DO-35	175°C (Max)
S4D10120H DIODE SIL CARB 1.2KV 10A TO247AC SMC Diode Solutions	507	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
NXPSC10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	1,916	RFQ	Datasheet	-	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
PCFF75H60F RECTIFIER WAFER DIE onsemi	2,240	RFQ	-	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IV1D12005O2 DIODE SIL CARB 1.2KV 17A TO220-2 Inventchip	164	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	17A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	320pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
GD30MPS06J DIODE SIL CARB 650V 51A TO263-7 GeneSiC Semiconductor	540	RFQ	Datasheet	SiC Schottky MPS™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	-	No Recovery Time > 500mA (Io)	-	-	735pF @ 1V, 1MHz	-	-	Surface Mount	TO-263-7	-55°C ~ 175°C
WNSC2D151200WQ DIODE SIL CARB 1.2KV 15A TO247-2 WeEn Semiconductors	4,589	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	700pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
VS-80EBU04 DIODE GEN PURP 400V 80A POWIRTAB Vishay General Semiconductor - Diodes Division	234	RFQ	Datasheet	FRED Pt®	PowerTab™, PowIRtab™	Bulk	Obsolete	Standard	400 V	80A	1.3 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 400 V	-	-	-	Chassis Mount	PowIRtab™	-
S4D20120A DIODE SIL CARB 1.2KV 20A TO220AC SMC Diode Solutions	1,043	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	721pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
NDSH10120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	450	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	12A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	680pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
NXPSC166506Q DIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors	3,003	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	534pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
PAD5 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	771	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	5 pA @ 20 V	0.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
NXPSC10650D6J DIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors	7,204	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)
1N3070 DIODE GEN PURP 200V 500MA DO35 Fairchild Semiconductor	3,990	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Standard	200 V	500mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 175 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	175°C (Max)
RURG8040 DIODE AVALANCHE 400V 80A TO247-2 Harris Corporation	7,789	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	400 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	500 µA @ 400 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
1N6643US DIODE GEN PURP 50V 300MA D-5B Microchip Technology	129	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	50 nA @ 50 V	5pF @ 0V, 1MHz	-	-	Surface Mount	D-5B	-65°C ~ 175°C
RURU15040RA 150A, 400V ULTRAFAST DIODE Harris Corporation	420	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-

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Single Diodes Electronic Components

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