Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
LSIC2SD065D16A DIODE SIL CARBIDE 650V 38A TO263 Littelfuse Inc.	819	RFQ	Datasheet	GEN2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	38A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	730pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
PAD20 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	484	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	20 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
SCS212AGHRC DIODE SIL CARB 650V 12A TO220AC Rohm Semiconductor	1,778	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
LSIC2SD065E12CCA DIODE SIC 650V 18.5A TO247AD Littelfuse Inc.	500	RFQ	Datasheet	GEN2	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	18.5A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	300pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
PAD10 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	495	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	10 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
PAD2 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	497	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	2 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
CDBDSC51200-G DIODE SIL CARBIDE 1.2KV 18A DPAK Comchip Technology	411	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	18A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	475pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
IDH10S120AKSA1 DIODE SIL CARB 1.2KV 10A TO220-2 Infineon Technologies	9,194	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 1200 V	500pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
RHRU150100 DIODE GEN PURP 1KV 150A SOT93 Harris Corporation	265	RFQ	Datasheet	-	TO-218-3	Bulk	Active	Standard	1000 V	150A	3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 1000 V	-	-	-	Through Hole	SOT-93	-65°C ~ 175°C
FFSH10120A DIODE SIL CARB 1.2KV 17A TO247-2 onsemi	277	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	17A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH2065A DIODE SIL CARB 650V 25A TO247-2 onsemi	260	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	25A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1085pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
S4D30120G0 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	685	RFQ	-	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-2	-
PCDP10120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,984	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	529pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
JANTX1N6638 DIODE GEN PURP 125V 300MA MACOM Technology Solutions	324	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Discontinued at Digi-Key	Standard	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	100 µA @ 125 V	-	Military	MIL-PRF-19500/578 & /609	Surface Mount	D-5D	-65°C ~ 175°C
E6D20065G DIODE SIC 650V 68A TO263 Wolfspeed, Inc.	969	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	68A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	1277pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
RURU10060 DIODE GEN PURP 600V 100A TO218 Harris Corporation	305	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Standard	600 V	100A	1.6 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-218	-65°C ~ 175°C
PCDB10120G1_R2_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,350	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	529pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
PCDD10120G1_L2_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,768	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	529pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
JANTXV1N6642US DIODE GEN PURP 100V 300MA D-5B Microchip Technology	108	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	100 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 100 V	-	Military	MIL-PRF-19500/578	Surface Mount	D-5B	-65°C ~ 175°C
IDW30G65C5FKSA1 DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies	7,764	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	1.1 mA @ 650 V	860pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C

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Single Diodes Electronic Components

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