Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N6628 DIODE GEN PURP 600V 1.75A A-PAK Microchip Technology	102	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	2 µA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 150°C
C6D30065H 88A, 650V SILICON CARBIDE SCHOTT Wolfspeed, Inc.	322	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	88A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	-	45 µA @ 650 V	1851pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
CDLL5711/TR DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology	101	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Schottky	50 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
VS-60EPF06-M3 DIODE GP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	582	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-3C20ET12S2L-M3 20A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	-	110 µA @ 1200 V	73pF @ 800V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
PCDP2065GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.6 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	1211pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-1N1184A DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	266	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	40A	1.3 V @ 126 A	Standard Recovery >500ns, > 200mA (Io)	-	2.5 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 200°C
VS-3C30CP12L-M3 30A 1200V SIC ZERO QRR DUAL TJMA Vishay General Semiconductor - Diodes Division	500	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	-	75 µA @ 1200 V	56pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
JANTX1N5711UR-1/TR DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology	829	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Schottky	50 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Surface Mount	DO-213AA	-65°C ~ 150°C
NVDSH20120C DIODE SIL CARB 1.2KV 26A TO247-2 onsemi	447	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	26A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1480pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
STPSC20G12WLY AUTOMOTIVE 1200 V, 20A POWER SCH STMicroelectronics	170	RFQ	Datasheet	ECOPACK®2	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	DO-247 LL	-55°C ~ 175°C
IDWD10G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	RFQ	Datasheet	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	35A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 2 kV	1140pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
SCS220KNHRTRL 1200V 20A SMD SILICON CARBIDE Rohm Semiconductor	500	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	1050pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
DSEP60-06AZ-TRL Power Diode Discretes-FRED TO- IXYS	376	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	Standard	600 V	60A	2.04 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	650 µA @ 600 V	67pF @ 400V, 1MHz	-	-	Surface Mount	TO-268AA (D3Pak-HV)	-55°C ~ 175°C
S3D100068H2 SILICON CARBIDE DIODE 680V, 100A SMC Diode Solutions	300	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	680 V	180A	1.7 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 680 V	6400pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
SDS120J030H3-ISATH DIODE 1200V-30A TO247-2L Luminus Devices Inc.	133	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	95A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	72 µA @ 1200 V	2546pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
VS-3C40CP12L-M3 40A 1200V SIC ZERO QRR DUAL TJMA Vishay General Semiconductor - Diodes Division	484	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	40A	1.5 V @ 40 A	No Recovery Time > 500mA (Io)	-	110 µA @ 1200 V	73pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
E6D40065H DIODE SIC 650V TO247 Wolfspeed, Inc.	381	RFQ	Datasheet	E	TO-247-2	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	109A	1.5 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	2460pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
IDW32G65C5BXKSA2 DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies	230	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
S5D25170H 1700V, 25A, TO-247AC, SIC SCHOTT SMC Diode Solutions	107	RFQ	Datasheet	-	TO-247-2	Tube	Active	Schottky	1700 V	66A	1.8 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 1700 V	2252pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C

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Single Diodes Electronic Components

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