Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
E6D16065H DIODE SIC 650V TO247 Wolfspeed, Inc.	444	RFQ	Datasheet	E	TO-247-2	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	1017pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
S3D50065F DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	294	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	680 V	112A	1.7 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 680 V	3120pF @ 0V, 100MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
PCDP1665GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.8 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	446pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-3C15ET12S2L-M3 15A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	-	75 µA @ 1200 V	56pF @ 800V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-3C20ET12T-M3 20A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	1,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	-	110 µA @ 1200 V	73pF @ 800V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
S4D40120F DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	500	RFQ	-	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	-	-	-	-	-	-	-	-	-	-	Through Hole	ITO-220AC	-
S4D30120F 1200V, 30A, ITO-220AC, SIC SCHOT SMC Diode Solutions	250	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
SDS120J020H3-ISATH DIODE 1200V-20A TO247-2L Luminus Devices Inc.	297	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	63A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	1565pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
VS-3C20EP12L-M3 20A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	500	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	-	110 µA @ 1200 V	73pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-3C20CP12L-M3 20A 1200V SIC ZERO QRR DUAL TJMA Vishay General Semiconductor - Diodes Division	500	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	-	60 µA @ 1200 V	38pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
1N5418US DIODE GEN PURP 400V 3A D-5B Microchip Technology	102	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
PCDP2065GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	529pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1665GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.6 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	995pF @ 1V, 100kHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SCS230ANHRTRL 650V, 30A, SMD, SILICON-CARBIDE Rohm Semiconductor	892	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.55 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 600 V	1090pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
PCDP20120GB_T0_00601 SIC DIODE 1200V/20A IN TO-220AC Panjit International Inc.	2,000	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
C6D20065D1 SIC, SCHOTTKY DIODE, 64A, 650V, Wolfspeed, Inc.	866	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	64A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
C6D20065H SIC, SCHOTTKY DIODE,66A, 650V, T Wolfspeed, Inc.	365	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	66A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
S4D30120H DIODE SIL CARB 1.2KV 94A TO247AC SMC Diode Solutions	1,170	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	94A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	2581pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
VS-3C30EP12L-M3 30A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	494	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	-	130 µA @ 1200 V	124pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
FFSH5065B-F155 650V 50A SIC SBD GEN 1.5 onsemi	435	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	48A	1.7 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	2030pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C

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Single Diodes Electronic Components

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