Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-3C10ET12T-M3 10A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	915	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	-	60 µA @ 1200 V	38pF @ 800V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SDS120J010H3-ISATH DIODE 1200V-10A TO247-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	36A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SCS215ANHRTRL 650V 15A SMD SILICON CARBIDE Rohm Semiconductor	500	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
JANTX1N914UR DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	233	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
TSCDT16065G1 DIODE SCHOTTKY 650V 16A TO220AC Taiwan Semiconductor Corporation	994	RFQ	-	-	TO-220-2	Tube	Active	Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	70pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
IDWD140E120D7XKSA1 DIODE GEN PURP 1200V 207A TO247 Infineon Technologies	167	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	207A	3 V @ 140 A	Fast Recovery =< 500ns, > 5A (Io)	225 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
TSCDF16065G1 DIODE SCHOTTKY 650V 16A ITO220AC Taiwan Semiconductor Corporation	1,000	RFQ	-	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	70pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
1N3070-1 DIODE GEN PURP 175V 100MA DO7 Microchip Technology	257	RFQ	Datasheet	-	DO-204AA, DO-7, Axial	Bulk	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	-	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
SDS065J020H3-ISATH DIODE 650V-20A TO247-2L Luminus Devices Inc.	190	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
1N3070UR-1/TR SIGNAL OR COMPUTER DIODE Microchip Technology	135	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
PCDF1065G1_T0_00601 650V/10A THROUGH HOLE SILICON CA Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
VS-3C15ET12T-M3 15A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	1,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	-	75 µA @ 1200 V	56pF @ 800V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SCS212AJTLL DIODE SIL CARB 650V 12A TO263AB Rohm Semiconductor	960	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	-	-	-	Surface Mount	TO-263AB	175°C (Max)
PCDP1065GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,975	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	446pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-1N1183A DIODE GEN PURP 50V 40A DO203AB Vishay General Semiconductor - Diodes Division	204	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	50 V	40A	1.3 V @ 126 A	Standard Recovery >500ns, > 200mA (Io)	-	2.5 mA @ 50 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 200°C
TSCDF20065G1 DIODE SCHOTTKY 650V 20A ITO220AC Taiwan Semiconductor Corporation	992	RFQ	-	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	92.7pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
TSCDT20065G1 DIODE SCHOTTKY 650V 20A TO220AC Taiwan Semiconductor Corporation	967	RFQ	-	-	TO-220-2	Tube	Active	Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	92.7pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-3C10ET12S2L-M3 10A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	-	60 µA @ 1200 V	38pF @ 800V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
S5D10170H2 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	294	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	44A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	978pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
PCDP1265GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	372pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C

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Single Diodes Electronic Components

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