Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-3C10CP12L-M3 10A 1200V SIC ZERO QRR DUAL TJMA Vishay General Semiconductor - Diodes Division	500	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	-	30 µA @ 1200 V	20pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
SCS205KNHRTRL 1200V 5A SMD SILICON CARBIDE Rohm Semiconductor	200	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	260pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
BSDV10G120E2 DIOD SCHOT SIC 1200V 10A TO247-2 Bourns Inc.	2,994	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	481pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
SCS310AGC16 DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor	1,000	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
PCDG10120GB_L2_00601 SIC DIODE 1200V/10A IN TO-252AA Panjit International Inc.	6,000	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
SDS065J016H3-ISATH DIODE 650V-16A TO247-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	44A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	48 µA @ 650 V	837pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
IDWD120E120D7XKSA1 DIODE GEN PURP 1200V 177A TO247 Infineon Technologies	129	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	177A	3 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	215 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
SIT20C065 DIODE SIL CARB 650V 20A TO220AC Diotec Semiconductor	970	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
SDS120J010E3-ISARH DIODE 1200V-10A TO263-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2L	-55°C ~ 175°C
VS-90EPF12L-M3 DIODE GEN PURP 1.2KV 90A TO247AD Vishay General Semiconductor - Diodes Division	466	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	90A	1.38 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
PCDF0865G1_T0_00601 650V/8A THROUGH HOLE SILICON CAR Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
FFSH3065B DIODE SIL CARB 650V 37A TO247-2 onsemi	326	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	37A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1260pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
SDS065J020D3-ISARH DIODE 650V-20A TO252-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
PCDP0865GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	372pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1065GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,961	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	271pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PSC1665JJ SIC DIODES AND FETS Nexperia USA Inc.	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	475pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK R2P	-55°C ~ 175°C
PCDD1065GB_L2_00601 650V/10A IN TO-252AA PACKAGE SIL Panjit International Inc.	3,000	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	610pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
VS-30EPF10-M3 DIODE GP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division	326	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
JAN1N5809 DIODE GEN PURP 100V 6A AXIAL Microchip Technology	117	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
FFSP15120A DIODE SIL CARB 1.2KV 15A TO220L onsemi	574	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.75 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	936pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C

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Single Diodes Electronic Components

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