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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SDS065J050H3-ISATH Luminus Devices Inc. electronic component

SDS065J050H3-ISATH

DIODE 650V-50A TO247-2L

Luminus Devices Inc.

148
RFQ

Datasheet

Sanan TO247 TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 114A 1.5 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 2970pF @ 0V, 1MHz - - Through Hole TO-247-2L -55°C ~ 175°C
VS-80APF06-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-80APF06-M3

DIODE GEN PURP 600V 80A TO247AC

Vishay General Semiconductor - Diodes Division

289
RFQ

Datasheet

- TO-247-3 Tube Active Standard 600 V 80A 1.25 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 190 ns 100 µA @ 600 V - - - Through Hole TO-247AC -40°C ~ 150°C
VS-85HF40M8 Vishay General Semiconductor - Diodes Division electronic component

VS-85HF40M8

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

152
RFQ

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 400 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
STPSC30G12WL STMicroelectronics electronic component

STPSC30G12WL

1200 V, 20 A HIGH SURGE SILICON

STMicroelectronics

166
RFQ

Datasheet

- - Tube Active - - - - - - - - - - - - -
1N5822 Microchip Technology electronic component

1N5822

SCHOTTKY DO201 40V 3A 150C

Microchip Technology

131
RFQ

Datasheet

- B, Axial Bulk Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - - - Through Hole B, Axial -65°C ~ 125°C
GP12022-BP Micro Commercial Co electronic component

GP12022-BP

STANDARD RECTIFIER 2200V 120A TO

Micro Commercial Co

1,777
RFQ

Datasheet

- TO-264-2 Tape & Reel (TR) Active Standard 2200 V 120A 1.31 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 2200 V - - - Through Hole TO-264P -55°C ~ 150°C
STPSC40G12WL STMicroelectronics electronic component

STPSC40G12WL

1200 V, 20 A HIGH SURGE SILICON

STMicroelectronics

200
RFQ

-

- - Tube Active - - - - - - - - - - - - -
E6D40065G Wolfspeed, Inc. electronic component

E6D40065G

DIODE SIC 650V 131A TO263

Wolfspeed, Inc.

1,042
RFQ

Datasheet

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Last Time Buy SiC (Silicon Carbide) Schottky 650 V 131A 1.5 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 650 V 2485pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
SDS170J025H5-ISATH Luminus Devices Inc. electronic component

SDS170J025H5-ISATH

DIODE 1700V-25A TO247-2L

Luminus Devices Inc.

150
RFQ

-

- TO-247-2 Tube Active - 1700 V 25A - - - - - - - Through Hole TO-247-2L -
SDS120J040H3-ISATH Luminus Devices Inc. electronic component

SDS120J040H3-ISATH

DIODE 1200V-40A TO247-2L

Luminus Devices Inc.

135
RFQ

Datasheet

Sanan TO247 TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 98A 1.6 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 96 µA @ 1200 V 2648pF @ 0V, 1MHz - - Through Hole TO-247-2L -55°C ~ 175°C
STPSC30G12WLY STMicroelectronics electronic component

STPSC30G12WLY

AUTOMOTIVE 1200 V, 30 A SILICON

STMicroelectronics

115
RFQ

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 225 µA @ 1200 V 2272pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole DO-247 LL -55°C ~ 175°C
SDS120J050H3-ISATH Luminus Devices Inc. electronic component

SDS120J050H3-ISATH

DIODE 1200V-50A TO247-2L

Luminus Devices Inc.

145
RFQ

Datasheet

Sanan TO247 TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 145A 1.5 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 4547pF @ 0V, 1MHz - - Through Hole TO-247-2L -55°C ~ 175°C
STPSC40G12WLY STMicroelectronics electronic component

STPSC40G12WLY

AUTOMOTIVE 1200 V, 40A POWER SCH

STMicroelectronics

200
RFQ

Datasheet

- - Tube Active - - - - - - - - - - - - -
IDWD25G200C5XKSA1 Infineon Technologies electronic component

IDWD25G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240
RFQ

Datasheet

CoolSiC™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 2000 V 77A 1.75 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 375 µA @ 2 kV 2850pF @ 1V, 100kHz - - Through Hole PG-TO247-2-U01 -55°C ~ 175°C
NDSH50120C-F155 onsemi electronic component

NDSH50120C-F155

SIC DIODE GEN2.0 1200V TO247-2L

onsemi

439
RFQ

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 53A 1.75 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 3691pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
IDWD40G200C5XKSA1 Infineon Technologies electronic component

IDWD40G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240
RFQ

Datasheet

CoolSiC™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 2000 V 114A 1.75 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 2 kV 4550pF @ 1V, 100kHz - - Through Hole PG-TO247-2-U01 -55°C ~ 175°C
IDWD50G200C5XKSA1 Infineon Technologies electronic component

IDWD50G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240
RFQ

Datasheet

CoolSiC™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 2000 V 140A 1.75 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 750 µA @ 2 kV 5700pF @ 1V, 100kHz - - Through Hole PG-TO247-2-U01 -55°C ~ 175°C
IDYH80G200C5XKSA1 Infineon Technologies electronic component

IDYH80G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240
RFQ

-

CoolSiC™ TO-247-4 Variant Tube Active SiC (Silicon Carbide) Schottky 2000 V 157A 1.75 V @ 80 A - - 1.2 A @ 2000 V 9100pF @ 1V, 100kHz - - Through Hole PG-TO247-U04 -55°C ~ 175°C
IDWD80G200C5XKSA1 Infineon Technologies electronic component

IDWD80G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240
RFQ

Datasheet

CoolSiC™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 2000 V 214A 1.75 V @ 80 A No Recovery Time > 500mA (Io) 0 ns 1.2 mA @ 2 kV 9100pF @ 1V, 100kHz - - Through Hole PG-TO247-2-U01 -55°C ~ 175°C
JANTX1N3891 Microchip Technology electronic component

JANTX1N3891

DIODE GEN PURP 200V 12A DO203AA

Microchip Technology

96
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 1.5 V @ 38 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 10 µA @ 200 V - Military MIL-PRF-19500/304 Stud Mount DO-203AA -65°C ~ 175°C
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Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

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Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
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Q3: Are datasheets and technical information available?
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Q4: Do you support BOM sourcing?
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