Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
PSDH60120S1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	3,904	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	1200 V	60A	3.2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	255 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
PSDH6060S1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,347	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
IDWD40E65E7XKSA1 HOME APPLIANCES 14 Infineon Technologies	168	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	50A	2.1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	89 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
VS-3C05ET12T-M3 5A 1200V SIC ZERO QRR SINGLE TJM Vishay General Semiconductor - Diodes Division	939	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	-	30 µA @ 1200 V	20pF @ 800V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
JAN1N5615 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	853	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 200 V	-	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
MUR60120BH-BP SUPERFAST RECTIFIERS 1200V 60A, Micro Commercial Co	1,800	RFQ	Datasheet	-	TO-247-2	Tape & Reel (TR)	Active	Standard	1200 V	60A	3.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	5 µA @ 1200 V	250pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-ETU3006STRLHM3 DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division	208	RFQ	Datasheet	FRED Pt®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-65°C ~ 175°C
SDS065J010S3-ISBRH DIODE 650V-10A DFN8*8-4L Luminus Devices Inc.	300	RFQ	Datasheet	-	4-PowerVSFN	Tape & Reel (TR)	Active	-	650 V	10A	-	-	-	-	-	-	-	Surface Mount	4-DFN (8x8)	-
FFSM1065B DIODE SIL CARB 650V 13.5A 4PQFN onsemi	4,519	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	13.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	424pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
IDWD50E65E7XKSA1 DIODE GEN PURP 650V 92A TO247-2 Infineon Technologies	220	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	92A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 5A (Io)	94 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
S5D05170H 1700V, 5A, TO-247AC, SIC SCHOTTK SMC Diode Solutions	121	RFQ	Datasheet	-	TO-247-2	Tube	Active	Schottky	1700 V	22A	1.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 1700 V	497pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
IDWD60E120D7XKSA1 DIODE GEN PURP 1200V 94A TO247-2 Infineon Technologies	192	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	94A	3 V @ 60 A	Fast Recovery =< 500ns, > 5A (Io)	175 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
E6D10065A SIC, SCHOTTKY DIODE Wolfspeed, Inc.	985	RFQ	Datasheet	E	TO-220-2	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	34A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	630pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C
C3D08060G-TR DIODE SCHOTTKY 600V 24A TO263-2 Wolfspeed, Inc.	780	RFQ	Datasheet	Z-Rec®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	24A	1.8 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 600 V	26pF @ 400V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
PCDF0665G1_T0_00601 650V/6A THROUGH HOLE SILICON CAR Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	232pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
PGR9016PT_T0_00301 STANDARD REVERSE RECOVERY POWER Panjit International Inc.	2,100	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
TSCDT10065G1 DIODE SCHOTTKY 650V 10A TO220AC Taiwan Semiconductor Corporation	2,986	RFQ	-	-	TO-220-2	Tube	Active	Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	45pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
TSCDF10065G1 DIODE SCHOTTKY 650V 10A ITO220AC Taiwan Semiconductor Corporation	986	RFQ	-	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	45pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
VS-HFA08PB60-N3 DIODE GP 600V 8A TO247AC Vishay General Semiconductor - Diodes Division	250	RFQ	Datasheet	HEXFRED®	TO-247-2	Tube	Active	Standard	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	5 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
PCDD0665GB_L2_00601 650V/6A IN TO-252AA PACKAGE SILI Panjit International Inc.	3,000	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.6 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	373pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C

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Single Diodes Electronic Components

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