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Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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C4D10120E-TRDIODE SIL CARB 1.2KV 33A TO252-2 |
3,806 |
|
Datasheet |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 754pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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DSDI60-18ADIODE GEN PURP 1.8KV 63A TO247AD |
2,767 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1800 V | 63A | 4.1 V @ 70 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 mA @ 1800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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IDWD30G120C5XKSA1DIODE SIL CARB 1.2KV 87A TO247-2 |
652 |
|
Datasheet |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 87A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 248 µA @ 1200 V | 1980pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
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UJ3D1725K2DIODE SIL CARB 1.7KV 25A TO247-2 |
4,349 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.7 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 360 µA @ 1700 V | 1500pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IDWD40G120C5XKSA1DIODE SIL CARB 1.2KV 110A TO247 |
132 |
|
Datasheet |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 110A | 1.65 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 332 µA @ 1200 V | 2592pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
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FFSH5065B-F085DIODE SIL CARB 650V 50A TO247-2 |
331 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 2030pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
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NDSH25170ADIODE SIL CARB 1.7KV 25A TO247-2 |
849 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.75 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1700 V | 2025pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GD25MPS17HDIODE SIL CARB 1.7KV 56A TO247-2 |
1,285 |
|
Datasheet |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 56A | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1083pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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C6D10170H10A 1700V SIC, SCHOTTKY DIODE |
395 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 40A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1700 V | 1227pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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JANTXV1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB |
124 |
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Datasheet |
- | DO-213AB, MELF (Glass) | Bag | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
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UJ3D1250K2DIODE SIL CARB 1.2KV 50A TO247-2 |
14,813 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 2340pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
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GC05MPS33JDIODE SIL CARB 3.3KV 5A TO263-7 |
1,114 |
|
Datasheet |
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | 5A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Surface Mount | TO-263-7 | 175°C |
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C4D40120HDIODE SIL CARB 1.2KV 128A TO247 |
764 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 128A | 1.8 V @ 40 A | No Recovery Time > 500mA (Io) | - | 300 µA @ 1200 V | 2809pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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DMA150E1600NADIODE GP 1.6KV 150A SOT227B |
187 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | Standard | 1600 V | 150A | 1.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 µA @ 1600 V | 60pF @ 400V, 1MHz | - | - | Chassis Mount | SOT-227B | -40°C ~ 150°C |
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1N6391DIODE SCHOTTKY 45V 25A DO203AA |
74 |
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Datasheet |
- | DO-203AA, DO-4, Stud | Bulk | Active | Schottky | 45 V | 25A | 500 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | 2000pF @ 5V, 1MHz | - | - | Stud Mount | DO-203AA (DO-4) | -55°C ~ 175°C |
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JANTX1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF |
169 |
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Datasheet |
- | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Military | MIL-PRF-19500/620 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
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S300YDIODE GEN PURP 1.6KV 300A DO9 |
54 |
|
Datasheet |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 300A | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Chassis, Stud Mount | DO-9 | -60°C ~ 180°C |
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UGE1112AY4DIODE GEN PURP 8KV 4.2A UGE |
36 |
|
Datasheet |
- | UGE | Box | Active | Standard | 8000 V | 4.2A | 6.25 V @ 7 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 8000 V | - | - | - | Chassis Mount | UGE | - |
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1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF |
207 |
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Datasheet |
- | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
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MEO550-02DADIODE GEN PURP 200V 582A Y4-M6 |
143 |
|
Datasheet |
- | Y4-M6 | Bulk | Active | Standard | 200 V | 582A | 1.25 V @ 520 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 mA @ 200 V | - | - | - | Chassis Mount | Y4-M6 | -40°C ~ 150°C |
Single Diodes Electronic Components
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