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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
DSEI20-12A IXYS electronic component

DSEI20-12A

DIODE GEN PURP 1.2KV 17A TO220AC

IXYS

 846
RFQ

Datasheet

 		- TO-220-2 Tube Active Standard 1200 V 17A 2.15 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 750 µA @ 1200 V - - - Through Hole TO-220AC -40°C ~ 150°C
IDH10G65C6XKSA1 Infineon Technologies electronic component

IDH10G65C6XKSA1

DIODE SIL CARB 650V 24A TO220-2

Infineon Technologies

 869
RFQ

Datasheet

 		- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 24A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 33 µA @ 420 V 495pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
IDW75D65D1XKSA1 Infineon Technologies electronic component

IDW75D65D1XKSA1

DIODE GEN PURP 650V 150A TO247-3

Infineon Technologies

 2,129
RFQ

Datasheet

 		- TO-247-3 Tube Active Standard 650 V 150A 1.7 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 108 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3 -40°C ~ 175°C
JANTX1N5615 Microchip Technology electronic component

JANTX1N5615

DIODE GEN PURP 200V 1A A-PAK

Microchip Technology

 2,371
RFQ

Datasheet

 		- A, Axial Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
C3D10060A Wolfspeed, Inc. electronic component

C3D10060A

DIODE SIL CARB 600V 30A TO220-2

Wolfspeed, Inc.

 1,991
RFQ

Datasheet

 		Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 30A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 480pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
C3D10060G Wolfspeed, Inc. electronic component

C3D10060G

DIODE SIL CARB 600V 29A TO263-2

Wolfspeed, Inc.

 1,068
RFQ

Datasheet

 		Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 600 V 29A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 480pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
IDM10G120C5XTMA1 Infineon Technologies electronic component

IDM10G120C5XTMA1

DIODE SIL CARB 1.2KV 38A TO252-2

Infineon Technologies

 4,234
RFQ

Datasheet

 		CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 38A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 62 µA @ 12 V 29pF @ 800V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 150°C
GD05MPS17J-TR GeneSiC Semiconductor electronic component

GD05MPS17J-TR

1700V 5A TO-247-2 SIC SCHOTTKY M

GeneSiC Semiconductor

 1,286
RFQ

Datasheet

 		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1700 V 15A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 361pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
GD05MPS17H GeneSiC Semiconductor electronic component

GD05MPS17H

DIODE SIL CARB 1.7KV 15A TO247-2

GeneSiC Semiconductor

 993
RFQ

Datasheet

 		SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 15A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 361pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
VS-90EPS12L-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-90EPS12L-M3

DIODE GEN PURP 1.2KV 90A TO247AD

Vishay General Semiconductor - Diodes Division

 862
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 1200 V 90A 1.2 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
RURG5060-F085 onsemi electronic component

RURG5060-F085

DIODE GEN PURP 600V 50A TO247-2

onsemi

 387
RFQ

Datasheet

 		- TO-247-2 Tube Active Avalanche 600 V 50A 1.6 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 250 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
1N5552 Microchip Technology electronic component

1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

 911
RFQ

Datasheet

 		- B, Axial Bulk Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - - - Through Hole B, Axial -65°C ~ 175°C
C4D05120E Wolfspeed, Inc. electronic component

C4D05120E

DIODE SIL CARB 1.2KV 19A TO252-2

Wolfspeed, Inc.

 3,241
RFQ

Datasheet

 		Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 1200 V 19A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 390pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
C4D05120A Wolfspeed, Inc. electronic component

C4D05120A

DIODE SIL CARB 1.2KV 19A TO220-2

Wolfspeed, Inc.

 587
RFQ

Datasheet

 		Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 19A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 390pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
APT100S20BG Microchip Technology electronic component

APT100S20BG

DIODE SCHOTTKY 200V 120A TO247

Microchip Technology

 3,777
RFQ

Datasheet

 		- TO-247-2 Tube Active Schottky 200 V 120A 950 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 2 mA @ 200 V - - - Through Hole TO-247 [B] -55°C ~ 150°C
DSEP30-12A IXYS electronic component

DSEP30-12A

DIODE GEN PURP 1.2KV 30A TO247AD

IXYS

 5,978
RFQ

Datasheet

 		HiPerFRED™ TO-247-2 Tube Active Standard 1200 V 30A 2.74 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 250 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
VS-90EPS16L-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-90EPS16L-M3

DIODE GEN PURP 1.6KV 90A TO247AD

Vishay General Semiconductor - Diodes Division

 435
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 1600 V 90A 1.21 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
1N5712 Microchip Technology electronic component

1N5712

DIODE SCHOTTKY 20V 75MA DO35

Microchip Technology

 529
RFQ

Datasheet

 		- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
IDH10G120C5XKSA1 Infineon Technologies electronic component

IDH10G120C5XKSA1

DIODE SIL CARB 1.2KV 10A TO220-1

Infineon Technologies

 1,175
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 62 µA @ 1200 V 525pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
1N5806US Microchip Technology electronic component

1N5806US

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

 72,209
RFQ

Datasheet

 		- SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
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Single Diodes Electronic Components

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