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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
C3D06060F Wolfspeed, Inc. electronic component

C3D06060F

DIODE SIC 600V 11.5A TO220-F2

Wolfspeed, Inc.

1,323
RFQ

Datasheet

Z-Rec® TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 600 V 11.5A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 294pF @ 0V, 1MHz - - Through Hole TO-220-F2 -55°C ~ 175°C
GD10MPS12E GeneSiC Semiconductor electronic component

GD10MPS12E

DIODE SIL CARB 1.2KV 29A TO252-2

GeneSiC Semiconductor

9,841
RFQ

Datasheet

SiC Schottky MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 29A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 1200 V 367pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
VS-20ETF12S-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-20ETF12S-M3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

9,217
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 1200 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
IDM05G120C5XTMA1 Infineon Technologies electronic component

IDM05G120C5XTMA1

DIODE SIL CARB 1.2KV 5A TO252-2

Infineon Technologies

1,779
RFQ

Datasheet

CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 33 µA @ 1200 V 301pF @ 1V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 175°C
VS-8EWF12STR-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-8EWF12STR-M3

DIODE GEN PURP 1.2KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

5,847
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 270 ns 100 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-8EWF06STR-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-8EWF06STR-M3

DIODE GEN PURP 600V 8A D-PAK

Vishay General Semiconductor - Diodes Division

1,511
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 8A 1.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 600 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-8EWF12S-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-8EWF12S-M3

DIODE GEN PURP 1.2KV 8A TO252

Vishay General Semiconductor - Diodes Division

1,812
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 1200 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 270 ns 100 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
APT60D120BG Microchip Technology electronic component

APT60D120BG

DIODE GP 1.2KV 60A TO247

Microchip Technology

955
RFQ

Datasheet

- TO-247-2 Tube Active Standard 1200 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 250 µA @ 1200 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
APT60S20BG Microchip Technology electronic component

APT60S20BG

DIODE SCHOTTKY 200V 75A TO247

Microchip Technology

538
RFQ

Datasheet

- TO-247-2 Tube Active Schottky 200 V 75A 900 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 1 mA @ 200 V - - - Through Hole TO-247 [B] -55°C ~ 150°C
GD10MPS12A GeneSiC Semiconductor electronic component

GD10MPS12A

DIODE SIL CARB 1.2KV 25A TO220-2

GeneSiC Semiconductor

3,529
RFQ

Datasheet

SiC Schottky MPS™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 25A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 1200 V 367pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
STPSC10H065GY-TR STMicroelectronics electronic component

STPSC10H065GY-TR

DIODE SIL CARBIDE 650V 10A D2PAK

STMicroelectronics

1,273
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
VS-20ETF06FP-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-20ETF06FP-M3

DIODE GP 600V 20A TO220-2FP

Vishay General Semiconductor - Diodes Division

1,061
RFQ

Datasheet

- TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.67 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
VS-EPU6006LHN3 Vishay General Semiconductor - Diodes Division electronic component

VS-EPU6006LHN3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

895
RFQ

Datasheet

FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 110 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
DSI45-16A IXYS electronic component

DSI45-16A

DIODE GEN PURP 1.6KV 45A TO247AD

IXYS

978
RFQ

Datasheet

- TO-247-2 Tube Active Standard 1600 V 45A 1.28 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 20 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 175°C
1N5712-1 Microchip Technology electronic component

1N5712-1

DIODE SCHOTTKY 20V 75MA DO35

Microchip Technology

1,793
RFQ

Datasheet

- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
IDH05G120C5XKSA1 Infineon Technologies electronic component

IDH05G120C5XKSA1

DIODE SIL CARB 1.2KV 5A TO220-1

Infineon Technologies

899
RFQ

Datasheet

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 33 µA @ 1200 V 301pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
VS-90APS12L-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-90APS12L-M3

DIODE GEN PURP 1.2KV 90A TO247AD

Vishay General Semiconductor - Diodes Division

1,295
RFQ

Datasheet

- TO-247-3 Tube Active Standard 1200 V 90A 1.2 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
1N5615 Microchip Technology electronic component

1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

270
RFQ

Datasheet

- A, Axial Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
STPSC10H065B-TR STMicroelectronics electronic component

STPSC10H065B-TR

DIODE SIL CARBIDE 650V 10A DPAK

STMicroelectronics

12,231
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
1N5417 Microchip Technology electronic component

1N5417

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

1,183
RFQ

Datasheet

- Axial Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
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Single Diodes Electronic Components

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