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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
DH40-18A IXYS electronic component

DH40-18A

DIODE GEN PURP 1.8KV 40A TO247AD

IXYS

406
RFQ

Datasheet

SONIC-FRD™ TO-247-2 Tube Active Standard 1800 V 40A 2.7 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 100 µA @ 1800 V - - - Through Hole TO-247AD -40°C ~ 150°C
JAN1N5819UR-1 Microchip Technology electronic component

JAN1N5819UR-1

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

175
RFQ

Datasheet

- DO-213AB, MELF (Glass) Bulk Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
1N5809US Microchip Technology electronic component

1N5809US

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

629
RFQ

Datasheet

- SQ-MELF, B Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
IDH20G65C5XKSA2 Infineon Technologies electronic component

IDH20G65C5XKSA2

DIODE SIL CARB 650V 20A TO220-1

Infineon Technologies

864
RFQ

Datasheet

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 210 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
JANTX1N5811US Microchip Technology electronic component

JANTX1N5811US

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

116
RFQ

Datasheet

- SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
GD10MPS17H GeneSiC Semiconductor electronic component

GD10MPS17H

DIODE SIL CARB 1.7KV 26A TO247-2

GeneSiC Semiconductor

780
RFQ

Datasheet

SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 26A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 721pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N5819UR-1 Microchip Technology electronic component

1N5819UR-1

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

376
RFQ

Datasheet

- DO-213AB, MELF (Glass) Bulk Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz - - Surface Mount DO-213AB (MELF, LL41) -65°C ~ 150°C
IDW20G65C5XKSA1 Infineon Technologies electronic component

IDW20G65C5XKSA1

DIODE SIL CARB 650V 20A TO247-3

Infineon Technologies

270
RFQ

Datasheet

CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 210 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO247-3-41 -55°C ~ 175°C
1N5554 Microchip Technology electronic component

1N5554

DIODE GEN PURP 1KV 3A AXIAL

Microchip Technology

218
RFQ

Datasheet

- B, Axial Bulk Active Standard 1000 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - - - Through Hole B, Axial -65°C ~ 175°C
C4D10120A Wolfspeed, Inc. electronic component

C4D10120A

DIODE SIL CARB 1.2KV 33A TO220-2

Wolfspeed, Inc.

469
RFQ

Datasheet

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 33A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 754pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
IDH20G120C5XKSA1 Infineon Technologies electronic component

IDH20G120C5XKSA1

DIODE SIL CARB 1.2KV 56A TO220-1

Infineon Technologies

974
RFQ

Datasheet

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 56A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 123 µA @ 1200 V 1050pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDK20G120C5XTMA1 Infineon Technologies electronic component

IDK20G120C5XTMA1

DIODE SIL CARB 1.2KV 56A TO263-1

Infineon Technologies

1,079
RFQ

Datasheet

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 56A 1.8 V @ 20 A No Recovery Time > 500mA (Io) - 123 µA @ 1200 V 1050pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
STPSC20H12G-TR STMicroelectronics electronic component

STPSC20H12G-TR

DIODE SIL CARB 1.2KV 20A D2PAK

STMicroelectronics

4,630
RFQ

Datasheet

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 1650pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
1N5711UR-1 Microchip Technology electronic component

1N5711UR-1

DIODE SCHOTTKY 50V 33MA DO213AA

Microchip Technology

223
RFQ

Datasheet

- DO-213AA Bulk Active Schottky 50 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 150°C
GD60MPS06H GeneSiC Semiconductor electronic component

GD60MPS06H

DIODE SIL CARB 650V 82A TO247-2

GeneSiC Semiconductor

849
RFQ

Datasheet

SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 82A 1.8 V @ 60 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 650 V 1463pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
STPSC20H12GY-TR STMicroelectronics electronic component

STPSC20H12GY-TR

DIODE SIL CARB 1.2KV 20A D2PAK

STMicroelectronics

1,492
RFQ

Datasheet

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 1650pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
GAP3SLT33-214 GeneSiC Semiconductor electronic component

GAP3SLT33-214

DIODE SIC 3.3KV 300MA DO214AA

GeneSiC Semiconductor

6,598
RFQ

Datasheet

SiC Schottky MPS™ DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 3300 V 300mA 2.2 V @ 300 mA - 0 ns 10 µA @ 3300 V 42pF @ 1V, 1MHz - - Surface Mount DO-214AA -55°C ~ 175°C
JANTX1N5711UR-1 Microchip Technology electronic component

JANTX1N5711UR-1

DIODE SCHOTTKY 70V 33MA DO213AA

Microchip Technology

207
RFQ

Datasheet

- DO-213AA Bulk Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 100 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
DSEI120-06A IXYS electronic component

DSEI120-06A

DIODE GEN PURP 600V 77A TO247AD

IXYS

653
RFQ

Datasheet

FRED TO-247-2 Tube Active Standard 600 V 77A 1.3 V @ 70 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 3 mA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
123SPC100A SMC Diode Solutions electronic component

123SPC100A

DIODE SCHOTTKY 100V 120A SPD-3A

SMC Diode Solutions

1,569
RFQ

Datasheet

- SPD-3A Bulk Active Schottky 100 V 120A 870 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 100 V 3000pF @ 5V, 1MHz - - Surface Mount SPD-3A -55°C ~ 175°C
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Single Diodes Electronic Components

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