Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
C3D12065A DIODE SIL CARB 650V 35A TO220-2 Wolfspeed, Inc.	1,747	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	35A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	74 µA @ 650 V	641.5pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IDW10G65C5XKSA1 DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies	232	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
IDD08SG60CXTMA2 DIODE SIL CARB 600V 8A TO252-3 Infineon Technologies	178	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	8A	2.1 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 600 V	240pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-3	-55°C ~ 175°C
VS-3C08ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	2,373	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
FFSB0865B-F085 DIODE SIL CARB 650V 10.1A D2PAK onsemi	550	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10.1A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
VS-90APS16L-M3 DIODE GEN PURP 1.6KV 90A TO247AD Vishay General Semiconductor - Diodes Division	492	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1600 V	90A	1.21 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
FFSP1665A DIODE SIL CARB 650V 16A TO220-2 onsemi	1,882	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.75 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC12065G2Y-TR DIODE SIL CARB 650V 12A D2PAK HV STMicroelectronics	859	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
C3D10065A DIODE SIL CARB 650V 30A TO220-2 Wolfspeed, Inc.	938	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
FFSM1065A DIODE SIL CARBIDE 650V 11A 4PQFN onsemi	2,995	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
STPSC12H065D DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	966	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 650 V	600pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
FFSH1265BDN-F085 DIODE SIL CARB 650V 7.2A TO247-3 onsemi	756	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	7.2A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-3	-55°C ~ 175°C
SCS308AJTLL DIODE SIL CARBIDE 650V 8A LPTL Rohm Semiconductor	915	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
SIC0860PL8-TP DIODE SIL CARB 650V 8A DFN8080A Micro Commercial Co	6,000	RFQ	Datasheet	-	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	346pF @ 0V, 1MHz	-	-	Surface Mount	DFN8080A	-55°C ~ 175°C
VS-3C16ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	3,020	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 650 V	700pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-EPH3006-N3 DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	422	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	30A	2.65 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-65°C ~ 175°C
VS-APU3006-N3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	440	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-65°C ~ 175°C
SICB1060P-TP DIODE SIL CARBIDE 650V 10A D2PAK Micro Commercial Co	780	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	36pF @ 400V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
S3D30065A DIODE SIL CARB 650V 84A TO220AC SMC Diode Solutions	996	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
VS-E5PX7512L-N3 DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division	500	RFQ	Datasheet	FRED Pt® Gen 5	TO-247-2	Tube	Active	Standard	1200 V	75A	3.3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C

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Single Diodes Electronic Components

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