Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSP1065B-F085 DIODE SIL CARB 650V 10A TO220-2 onsemi	789	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C
VS-E5TX3012S2LHM3 DIODE GEN PURP 1.2KV 30A TO263AB Vishay General Semiconductor - Diodes Division	1,582	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	30A	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-20ETF08-M3 DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division	7,984	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	800 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	100 µA @ 800 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
RFN20NS3STL DIODE GEN PURP 350V 20A LPDS Rohm Semiconductor	784	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	350 V	20A	1.35 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 350 V	-	-	-	Surface Mount	LPDS	150°C
C3D06065A DIODE SIL CARB 650V 19A TO220-2 Wolfspeed, Inc.	839	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	19A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	294pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC8H065D DIODE SIL CARB 650V 8A TO220AC STMicroelectronics	794	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	414pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STTH30M06SPF DIODE GEN PURP 600V 30A TO3PF STMicroelectronics	876	RFQ	Datasheet	-	TO-3P-3 Full Pack	Tube	Active	Standard	600 V	30A	3.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	60 µA @ 600 V	-	-	-	Through Hole	TO-3PF	175°C (Max)
RFS30TZ6SGC13 DIODE GEN PURP 650V 30A TO247GE Rohm Semiconductor	584	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 650 V	-	-	-	Through Hole	TO-247GE	175°C
FFSD0865B-F085 DIODE SIL CARB 650V 11.6A DPAK onsemi	3,693	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11.6A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
STTH30R04DY DIODE GEN PURP 400V 30A TO220AC STMicroelectronics	772	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	400 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 400 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
S3D10065F DIODE SIL CARB 650V 10A ITO220AC SMC Diode Solutions	285	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	-	-	Through Hole	ITO-220AC (TO-220-2F)	-55°C ~ 175°C
FFSM0665B DIODE SIL CARB 650V 9.1A 4PQFN onsemi	2,980	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	9.1A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
VS-E5TH3006S2LHM3 30A, 600V, "H" SERIES GEN 5 FRED Vishay General Semiconductor - Diodes Division	789	RFQ	Datasheet	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	1.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	46 ns	20 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
S4D05120G DIODE SIL CARBIDE 1.2KV 5A D2PAK SMC Diode Solutions	702	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	302pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
VS-3C10ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	3,047	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	445pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
FFSP0865A DIODE SIL CARB 650V 13A TO220-2 onsemi	790	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	13A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-E5PH3012L-N3 DIODE GEN PURP 1.2KV 30A TO247AD Vishay General Semiconductor - Diodes Division	243	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	113 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
UCHD30A09-TE24L2 DIODE SCHOTTKY 90V 30A TO263LP KYOCERA AVX	2,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	90 V	30A	790 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	-	-	Surface Mount	TO-263LP	-40°C ~ 150°C
VS-EPX6007L-N3 DIODE GEN PURP 650V 60A TO247AD Vishay General Semiconductor - Diodes Division	495	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	42 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PX3012L-N3 DIODE GEN PURP 1.2KV 30A TO247AD Vishay General Semiconductor - Diodes Division	372	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	30A	3.15 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C

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Single Diodes Electronic Components

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