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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-E5TX3012S2L-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-E5TX3012S2L-M3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

1,540
RFQ

Datasheet

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
S3D08065A SMC Diode Solutions electronic component

S3D08065A

DIODE SIL CARB 650V 23A TO220AC

SMC Diode Solutions

1,438
RFQ

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 23A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 51 µA @ 650 V 661pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
FFSP1065B onsemi electronic component

FFSP1065B

DIODE SIL CARB 650V 11A TO220-2

onsemi

628
RFQ

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 11A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-EPU6006-N3 Vishay General Semiconductor - Diodes Division electronic component

VS-EPU6006-N3

DIODE GP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

475
RFQ

Datasheet

FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 110 ns 30 µA @ 600 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
IDL06G65C5XUMA2 Infineon Technologies electronic component

IDL06G65C5XUMA2

DIODE SIL CARBIDE 650V 6A VSON-4

Infineon Technologies

2,908
RFQ

Datasheet

CoolSiC™+ 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount PG-VSON-4 -55°C ~ 150°C
FFSP0665A onsemi electronic component

FFSP0665A

DIODE SIL CARB 650V 8.8A TO220L

onsemi

688
RFQ

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8.8A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz - - Through Hole TO-220-2L -55°C ~ 175°C
DSI30-12AS-TUB IXYS electronic component

DSI30-12AS-TUB

DIODE GEN PURP 1.2KV 30A TO263AA

IXYS

1,195
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 1200 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1200 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
FFSD0865B onsemi electronic component

FFSD0865B

DIODE SIL CARB 650V 11.6A DPAK

onsemi

148
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11.6A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
SCS302AJTLL Rohm Semiconductor electronic component

SCS302AJTLL

DIODE SIL CARB 650V 2.15A LPTL

Rohm Semiconductor

499
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs SiC (Silicon Carbide) Schottky 650 V 2.15A 1.5 V @ 2.15 A No Recovery Time > 500mA (Io) 0 ns 10.8 µA @ 650 V 110pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
VS-10ETF10FP-M3 Vishay General Semiconductor - Diodes Division electronic component

VS-10ETF10FP-M3

DIODE GP 1KV 10A TO220-2FP

Vishay General Semiconductor - Diodes Division

442
RFQ

Datasheet

- TO-220-2 Full Pack Tube Active Standard 1000 V 10A 1.33 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 310 ns 100 µA @ 1000 V - - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
VS-E5TH2112S2LHM3 Vishay General Semiconductor - Diodes Division electronic component

VS-E5TH2112S2LHM3

20A, 1200V, "H" SERIES GEN 5 FRE

Vishay General Semiconductor - Diodes Division

850
RFQ

Datasheet

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 20A 2.66 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-E5PH3006LHN3 Vishay General Semiconductor - Diodes Division electronic component

VS-E5PH3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

878
RFQ

Datasheet

FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 46 ns 20 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-E5PX3006LHN3 Vishay General Semiconductor - Diodes Division electronic component

VS-E5PX3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

490
RFQ

Datasheet

FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
APT40DQ120SG Microchip Technology electronic component

APT40DQ120SG

DIODE GEN PURP 1.2KV 40A D3PAK

Microchip Technology

958
RFQ

Datasheet

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Standard 1200 V 40A 3.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 100 µA @ 1200 V - - - Surface Mount D3PAK -55°C ~ 175°C
VS-E5TH1512S2LHM3 Vishay General Semiconductor - Diodes Division electronic component

VS-E5TH1512S2LHM3

DIODE GEN PURP 1.2KV 15A TO263AB

Vishay General Semiconductor - Diodes Division

815
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 15A 2.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-E5PH6006L-N3 Vishay General Semiconductor - Diodes Division electronic component

VS-E5PH6006L-N3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

705
RFQ

Datasheet

FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.7 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 54 ns 25 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
S4D04120E SMC Diode Solutions electronic component

S4D04120E

DIODE SIL CARBIDE 1.2KV 4A DPAK

SMC Diode Solutions

1,787
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 4A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
VS-E5PW6006LHN3 Vishay General Semiconductor - Diodes Division electronic component

VS-E5PW6006LHN3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

1,535
RFQ

Datasheet

FRED Pt® Gen 5 TO-247-2 Tube Active Standard 600 V 60A 2.6 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 25 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
RFN20TJ6SFHGC9 Rohm Semiconductor electronic component

RFN20TJ6SFHGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

978
RFQ

Datasheet

- TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220ACFP 150°C
UJ3D06516TS Qorvo electronic component

UJ3D06516TS

DIODE SIL CARB 650V 16A TO220-2

Qorvo

938
RFQ

Datasheet

Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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Single Diodes Electronic Components

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