Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SCS315AJTLL DIODE SIL CARBIDE 650V 15A LPTL Rohm Semiconductor	400	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
UJ3D1220K2 DIODE SIL CARB 1.2KV 20A TO247-2 Qorvo	327	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 1200 V	810pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSP3065A DIODE SIL CARB 650V 30A TO220-2L onsemi	1,291	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	1705pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
STTH1506DPI DIODE GEN PURP 600V 15A DOP3I STMicroelectronics	600	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	15A	3.6 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 600 V	-	-	-	Through Hole	DOP3I	150°C (Max)
FFSP20120A DIODE SIL CARB 1.2KV 20A TO220L onsemi	734	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-1N1184RA DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	170	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	40A	1.3 V @ 126 A	Standard Recovery >500ns, > 200mA (Io)	-	2.5 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 200°C
DUR60120W DIODE GEN PURP 1.2KV 60A TO247AC Littelfuse Inc.	20,857	RFQ	Datasheet	DUR	TO-247-2	Tube	Active	Standard	1200 V	60A	3.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	650 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
FFSH2065B-F085 DIODE SIL CARB 650V 20A TO247-2 onsemi	157	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
SCS210AJHRTLL DIODE SIL CARB 650V 10A TO263AB Rohm Semiconductor	894	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
RFL60TZ6SGC13 DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor	601	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	60A	1.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 650 V	-	-	-	Through Hole	TO-247GE	175°C
SCS215KGC17 DIODE SIC 1.2KV 15A TO220ACFP Rohm Semiconductor	1,996	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 1200 V	790pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
STPSC15H12G2-TR DIODE SIL CARB 1.2KV 15A D2PAK STMicroelectronics	1,943	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
VS-3C16ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,594	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 650 V	700pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
SCS215AEGC11 DIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor	293	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-247	175°C
RFS60TZ6SGC13 DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor	566	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 650 V	-	-	-	Through Hole	TO-247GE	175°C
FFSH1065B-F085 DIODE SIL CARB 650V 11.5A TO247 onsemi	1,685	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11.5A	-	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
S3D30065D1 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	255	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
IDW20G65C5BXKSA2 DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies	122	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
121SPC045A DIODE SCHOTTKY 45V 120A SPD-3A SMC Diode Solutions	340	RFQ	Datasheet	-	SPD-3A	Bulk	Active	Schottky	45 V	120A	660 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.4 mA @ 45 V	4800pF @ 5V, 1MHz	-	-	Surface Mount	SPD-3A	-55°C ~ 175°C
S3D30065H DIODE SIL CARB 650V 84A TO247AC SMC Diode Solutions	249	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C

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Single Diodes Electronic Components

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