Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
S3D10065E DIODE SIL CARBIDE 650V 10A DPAK SMC Diode Solutions	2,500	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
VS-3C12ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	3,048	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	65 µA @ 650 V	535pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
FFSP1265A DIODE SIL CARB 650V 15A TO220-2L onsemi	768	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
FFSD1065A DIODE SIL CARBIDE 650V 18A DPAK onsemi	6,468	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	18A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
FFSB1065B-F085 DIODE SIL CARBIDE 650V 27A D2PAK onsemi	1,530	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	27A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
S3D10065G DIODE SIL CARBIDE 650V 10A D2PAK SMC Diode Solutions	496	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
1N5617E3 DIODE GEN PURP 400V 1A A AXIAL Microchip Technology	194	RFQ	Datasheet	-	A, Axial	Bag	Active	Standard	400 V	1A	800 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	35pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
C6D08065Q-TR DIODE SIL CARBIDE 650V 28A 4QFN Wolfspeed, Inc.	2,110	RFQ	Datasheet	-	4-PowerVQFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	28A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	4-QFN (8x8)	-55°C ~ 175°C
FFSP1065A DIODE SIL CARB 650V 15A TO220-2L onsemi	1,506	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
IDDD10G65C6XTMA1 DIODE SIL CARB 650V 29A HDSOP-10 Infineon Technologies	1,323	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	29A	-	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 420 V	495pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
STPSC12065GY-TR DIODE SIL CARBIDE 650V 12A D2PAK STMicroelectronics	770	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	750pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
SICF0860P-BP DIODE SIL CARB 650V 8A ITO220AC Micro Commercial Co	4,940	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	30pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
STTH60RQ06WL DIODE GEN PURP 600V 60A DO247 LL STMicroelectronics	475	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	2.95 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	80 µA @ 600 V	-	-	-	Through Hole	DO-247 LL	175°C (Max)
SICF1060P-BP DIODE SIL CARB 650V 10A ITO220AC Micro Commercial Co	4,983	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	452pF @ 0V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
FFSB0865A DIODE SIC 650V 15.4A D2PAK-3 onsemi	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15.4A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
UJ3D1210K2 DIODE SIL CARB 1.2KV 10A TO247-2 Qorvo	7,101	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	510pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
1N4247 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	338	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
RFV30TG6SGC9 DIODE GP 600V 30A TO220ACFP Rohm Semiconductor	822	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	2.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220ACFP	150°C
MUR60120B-BP DIODE GEN PURP 1.2KV 60A TO247AD Micro Commercial Co	986	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	3.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	15 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PX6012LHN3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	277	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	3.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C

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Single Diodes Electronic Components

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