Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
UGS30JH DIODE GEN PURP 600V 30A TO263AB Taiwan Semiconductor Corporation	808	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 600 V	128pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
VS-EPX3007L-N3 DIODE GEN PURP 650V 30A TO247AD Vishay General Semiconductor - Diodes Division	499	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
IDP18E120XKSA1 DIODE GP 1.2KV 31A TO220-2-2 Infineon Technologies	423	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	31A	2.15 V @ 18 A	Fast Recovery =< 500ns, > 200mA (Io)	195 ns	100 µA @ 1200 V	-	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 150°C
S3D10065A DIODE SIL CARB 650V 10A TO220AC SMC Diode Solutions	1,964	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
S3D06065G DIODE SIL CARBIDE 650V 6A D2PAK SMC Diode Solutions	769	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 650 V	382pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
VS-8EWS12S-M3 DIODE GEN PURP 1.2KV 8A DPAK Vishay General Semiconductor - Diodes Division	2,945	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	Standard	1200 V	8A	1.1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-55°C ~ 150°C
RFNL5TJ6SFHGC9 DIODE GEN PURP 600V 5A TO220ACFP Rohm Semiconductor	2,739	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
RFUH20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	944	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 430 V	-	-	-	Surface Mount	LPDS	150°C
RFN20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	883	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 430 V	-	-	-	Surface Mount	LPDS	150°C
DLA20IM800PC-TUB DIODE GEN PURP 800V 20A TO263AA IXYS	1,039	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	800 V	20A	1.2 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	4pF @ 400V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
RF505TF6SC9 DIODE GEN PURP 600V 5A TO220NFM Rohm Semiconductor	430	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220NFM	150°C
C3D03065E DIODE SIL CARB 650V 11A TO252-2 Wolfspeed, Inc.	2,356	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.8 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	155pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
S4D05120A DIODE SIL CARB 1.2KV 5A TO220AC SMC Diode Solutions	853	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	302pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
STTH12T06DI DIODE GP 600V 12A TO220AC INS STMicroelectronics	548	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	Standard	600 V	12A	2.95 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
VS-E5TX2112S2LHM3 20A, 1200V, "X" SERIES GEN 5 FRE Vishay General Semiconductor - Diodes Division	835	RFQ	Datasheet	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	20A	3.6 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
IDP08E65D2XKSA1 DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies	2	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	650 V	8A	2.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	40 µA @ 650 V	-	-	-	Through Hole	TO-220-2	-40°C ~ 175°C
STTH30RQ06DY DIODE GEN PURP 600V 30A TO220AC STMicroelectronics	998	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
DMA10P1200UZ-TRL DIODE GEN PURP 1.2KV 10A TO252AA IXYS	1,673	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1200 V	10A	1.55 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	1pF @ 400V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
VS-E4PH6006LHN3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	456	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	68 ns	50 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-3C08ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,934	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C

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Single Diodes Electronic Components

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