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IGBT Modules

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Configuration Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Power - Max Vce(on) (Max) @ Vge, Ic Current - Collector Cutoff (Max) Input Capacitance (Cies) @ Vce Input NTC Thermistor Operating Temperature Mounting Type Supplier Device Package
MIXA151W1200EH IXYS electronic component

MIXA151W1200EH

IGBT MODULE 1200V 220A 695W

IXYS

8,477
RFQ

-

- - Box Active PT Three Phase Inverter 1200 V 220 A 695 W 2.1V @ 15V, 150A 500 µA - Standard No -40°C ~ 125°C (TJ) - -
MIXA20WB1200TML IXYS electronic component

MIXA20WB1200TML

IGBT MOD 1200V 28A MINIPACK2

IXYS

7,837
RFQ

-

- MiniPack2 Box Active PT Three Phase Inverter with Brake 1200 V 28 A 100 W 2.1V @ 15V, 16A 100 µA - Three Phase Bridge Rectifier Yes -40°C ~ 125°C (TJ) Chassis Mount MiniPack2
CM100TX-24S1 Powerex Inc. electronic component

CM100TX-24S1

IGBT MOD 1200V 100A 625W

Powerex Inc.

3,756
RFQ

-

- Module Tray Active - Three Level Inverter 1200 V 100 A 625 W 2.25V @ 15V, 100A 1 mA 10 nF @ 10 V Standard Yes -40°C ~ 150°C (TJ) - Module
VS-CPV362M4FPBF Vishay General Semiconductor - Diodes Division electronic component

VS-CPV362M4FPBF

IGBT MODULE 600V 8.8A 23W IMS-2

Vishay General Semiconductor - Diodes Division

9,271
RFQ

-

- 19-SIP (13 Leads), IMS-2 Bulk Obsolete - - 600 V 8.8 A 23 W 1.7V @ 15V, 4.8A 250 µA 340 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole IMS-2
VS-EMG050J60N Vishay General Semiconductor - Diodes Division electronic component

VS-EMG050J60N

IGBT MOD 600V 88A 338W EMIPAK2

Vishay General Semiconductor - Diodes Division

9,087
RFQ

-

- EMIPAK2 Bulk Obsolete - Half Bridge 600 V 88 A 338 W 2.1V @ 15V, 50A 100 µA 9.5 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount EMIPAK2
VS-ENQ030L120S Vishay General Semiconductor - Diodes Division electronic component

VS-ENQ030L120S

IGBT MOD 1200V 61A EMIPAK-1B

Vishay General Semiconductor - Diodes Division

7,623
RFQ

-

- EMIPAK-1B Bulk Active Trench Three Level Inverter 1200 V 61 A 216 W 2.52V @ 15V, 30A 230 µA 3.34 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount EMIPAK-1B
VS-ETL015Y120H Vishay General Semiconductor - Diodes Division electronic component

VS-ETL015Y120H

IGBT MOD 1200V 22A 89W EMIPAK-2B

Vishay General Semiconductor - Diodes Division

8,855
RFQ

-

- EMIPAK-2B Bulk Active Trench - 1200 V 22 A 89 W 3.03V @ 15V, 15A 75 µA 1.07 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount EMIPAK-2B
VS-GA100NA60UP Vishay General Semiconductor - Diodes Division electronic component

VS-GA100NA60UP

IGBT MOD 600V 100A 250W SOT227

Vishay General Semiconductor - Diodes Division

3,404
RFQ

-

- SOT-227-4, miniBLOC Bulk Obsolete - Single 600 V 100 A 250 W 2.1V @ 15V, 50A 250 µA 7.4 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount SOT-227
VS-GA100TS120UPBF Vishay General Semiconductor - Diodes Division electronic component

VS-GA100TS120UPBF

IGBT MOD 1200V 182A INT-A-PAK

Vishay General Semiconductor - Diodes Division

4,456
RFQ

-

- INT-A-Pak Bulk Obsolete - Half Bridge 1200 V 182 A 520 W 3V @ 15V, 100A 1 mA 18.67 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount INT-A-PAK
VS-GA200HS60S1PBF Vishay General Semiconductor - Diodes Division electronic component

VS-GA200HS60S1PBF

IGBT MOD 600V 480A INT-A-PAK

Vishay General Semiconductor - Diodes Division

2,070
RFQ

-

- INT-A-Pak Bulk Obsolete - Half Bridge 600 V 480 A 830 W 1.21V @ 15V, 200A 1 mA 32.5 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount INT-A-PAK
VS-GA200SA60UP Vishay General Semiconductor - Diodes Division electronic component

VS-GA200SA60UP

IGBT MOD 600V 200A 500W SOT227

Vishay General Semiconductor - Diodes Division

2,980
RFQ

-

- SOT-227-4, miniBLOC Bulk Obsolete - Single 600 V 200 A 500 W 1.9V @ 15V, 100A 1 mA 16.5 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount SOT-227
VS-GA200TH60S Vishay General Semiconductor - Diodes Division electronic component

VS-GA200TH60S

IGBT MOD 600V 260A INT-A-PAK

Vishay General Semiconductor - Diodes Division

6,690
RFQ

-

- Double INT-A-PAK (3 + 4) Bulk Obsolete - Half Bridge 600 V 260 A 1042 W 1.9V @ 15V, 200A (Typ) 5 µA 13.1 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount Double INT-A-PAK
VS-GA300TD60S Vishay General Semiconductor - Diodes Division electronic component

VS-GA300TD60S

IGBT MOD 600V 530A INT-A-PAK

Vishay General Semiconductor - Diodes Division

6,513
RFQ

-

- Dual INT-A-PAK (3 + 8) Bulk Obsolete - Half Bridge 600 V 530 A 1136 W 1.45V @ 15V, 300A 750 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount Dual INT-A-PAK
VS-GA400TD60S Vishay General Semiconductor - Diodes Division electronic component

VS-GA400TD60S

IGBT MOD 600V 750A INT-A-PAK

Vishay General Semiconductor - Diodes Division

2,493
RFQ

-

- Dual INT-A-PAK (3 + 8) Bulk Obsolete - Half Bridge 600 V 750 A 1563 W 1.52V @ 15V, 400A 1 mA - Standard No -40°C ~ 150°C (TJ) Chassis Mount Dual INT-A-PAK
VS-GB05XP120KTPBF Vishay General Semiconductor - Diodes Division electronic component

VS-GB05XP120KTPBF

IGBT MODULE 1200V 0 76W MTP

Vishay General Semiconductor - Diodes Division

6,927
RFQ

-

- 12-MTP Module Bulk Active - Three Phase Inverter 1200 V 12 A 76 W - 250 µA - Standard Yes -40°C ~ 150°C (TJ) Chassis Mount MTP
VS-GB100LH120N Vishay General Semiconductor - Diodes Division electronic component

VS-GB100LH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

9,156
RFQ

-

- Double INT-A-PAK (3 + 4) Bulk Obsolete - Single 1200 V 200 A 833 W 1.77V @ 15V, 100A (Typ) 1 mA 8.96 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount Double INT-A-PAK
VS-GB100LP120N Vishay General Semiconductor - Diodes Division electronic component

VS-GB100LP120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

6,999
RFQ

-

- INT-A-Pak Bulk Obsolete - Single 1200 V 200 A 658 W 1.8V @ 15V, 100A (Typ) 1 mA 7.43 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount INT-A-PAK
VS-GB100NH120N Vishay General Semiconductor - Diodes Division electronic component

VS-GB100NH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

5,526
RFQ

-

- Double INT-A-PAK (3 + 4) Bulk Obsolete - Single 1200 V 200 A 833 W 2.35V @ 15V, 100A 5 mA 8.58 nF @ 25 V Standard No 150°C (TJ) Chassis Mount Double INT-A-PAK
VS-GB100TH120N Vishay General Semiconductor - Diodes Division electronic component

VS-GB100TH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

4,636
RFQ

-

- Double INT-A-PAK (3 + 4) Bulk Obsolete - Half Bridge 1200 V 200 A 833 W 2.35V @ 15V, 100A 5 mA 8.58 nF @ 25 V Standard No 150°C (TJ) Chassis Mount Double INT-A-PAK
VS-GB100TH120U Vishay General Semiconductor - Diodes Division electronic component

VS-GB100TH120U

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

4,603
RFQ

-

- Double INT-A-PAK (3 + 4) Bulk Obsolete NPT Half Bridge 1200 V 200 A 1136 W 3.6V @ 15V, 100A 5 mA 8.45 nF @ 20 V Standard No -40°C ~ 150°C (TJ) Chassis Mount Double INT-A-PAK
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IGBT Modules Electronic Components

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