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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MSC080SMA120JS15 Microchip Technology electronic component

MSC080SMA120JS15

MOSFET SIC 1200V 80 MOHM 15A SOT

Microchip Technology

15
RFQ

Datasheet

- SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
TW015Z65C,S1F Toshiba Semiconductor and Storage electronic component

TW015Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 15

Toshiba Semiconductor and Storage

98
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 22mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C - - Through Hole TO-247-4L(X)
MSC017SMA120B Microchip Technology electronic component

MSC017SMA120B

MOSFET SIC 1200V 17 MOHM TO-247

Microchip Technology

38
RFQ

Datasheet

- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 113A (Tc) 20V 22mOhm @ 40A, 20V 2.7V @ 4.5mA (Typ) 249 nC @ 20 V +22V, -10V 5280 pF @ 1000 V - 455W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
IDYH50G200C5XKSA1 Infineon Technologies electronic component

IDYH50G200C5XKSA1

SIC DISCRETE

Infineon Technologies

75
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
FF100R12W1T7EB11BPSA1 Infineon Technologies electronic component

FF100R12W1T7EB11BPSA1

EASY STANDARD

Infineon Technologies

24
RFQ

Datasheet

- - Tray Active - - - - - - - - - - - - - - - - -
IXTX6N200P3HV Littelfuse Inc. electronic component

IXTX6N200P3HV

MOSFET N-CH 2000V 6A TO247PLUSHV

Littelfuse Inc.

15
RFQ

Datasheet

Polar P3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 2000 V 6A (Tc) 10V 4Ohm @ 3A, 10V 5V @ 250µA 143 nC @ 10 V ±20V 3700 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247PLUS-HV
APT50M50JVR Microchip Technology electronic component

APT50M50JVR

MOSFET N-CH 500V 77A ISOTOP

Microchip Technology

10
RFQ

Datasheet

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 77A (Tc) - 50mOhm @ 500mA, 10V 4V @ 5mA 1000 nC @ 10 V - 19600 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT20M11JVR Microchip Technology electronic component

APT20M11JVR

MOSFET N-CH 200V 175A ISOTOP

Microchip Technology

6
RFQ

Datasheet

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 175A (Tc) 10V 11mOhm @ 500mA, 10V 4V @ 5mA 180 nC @ 10 V ±30V 21600 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT10025JVR Microchip Technology electronic component

APT10025JVR

MOSFET N-CH 1000V 34A ISOTOP

Microchip Technology

10
RFQ

Datasheet

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 34A (Tc) - 250mOhm @ 500mA, 10V 4V @ 5mA 990 nC @ 10 V - 18000 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT8011JLL Microchip Technology electronic component

APT8011JLL

MOSFET N-CH 800V 51A ISOTOP

Microchip Technology

8
RFQ

Datasheet

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 51A (Tc) - 110mOhm @ 25.5A, 10V 5V @ 5mA 650 nC @ 10 V - 9480 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT60M60JLL Microchip Technology electronic component

APT60M60JLL

MOSFET N-CH 600V 70A ISOTOP

Microchip Technology

10
RFQ

Datasheet

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 60mOhm @ 35A, 10V 5V @ 5mA 289 nC @ 10 V ±30V 12630 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT8011JFLL Microchip Technology electronic component

APT8011JFLL

MOSFET N-CH 800V 51A ISOTOP

Microchip Technology

10
RFQ

Datasheet

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 51A (Tc) - 125mOhm @ 25.5A, 10V 5V @ 5mA 650 nC @ 10 V - 9480 pF @ 25 V - - - - - Chassis Mount ISOTOP®
FF6MR12W2M1HB70BPSA1 Infineon Technologies electronic component

FF6MR12W2M1HB70BPSA1

LOW POWER EASY

Infineon Technologies

10
RFQ

Datasheet

- - Tray Active - - - - - - - - - - - - - - - - -
FF4MR12W2M1HB70BPSA1 Infineon Technologies electronic component

FF4MR12W2M1HB70BPSA1

LOW POWER EASY

Infineon Technologies

13
RFQ

Datasheet

- - Tray Active - - - - - - - - - - - - - - - - -
EPC7003ASH EPC Space, LLC electronic component

EPC7003ASH

GAN FET HEMT 100V 10A.045OHM 4UB

EPC Space, LLC

25
RFQ

Datasheet

eGaN®, FSMD-A 4-SMD, No Lead Bulk Active N-Channel, Depletion Mode GaNFET (Gallium Nitride) 100 V 10A (Tc) 5V 45mOhm @ 10A, 5V 2.5V @ 1.4mA 2.2 nC @ 5 V +6V, -4V 233 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
EPC7004BSH EPC Space, LLC electronic component

EPC7004BSH

GAN FET HEMT

EPC Space, LLC

25
RFQ

Datasheet

eGaN®, FSMD-B 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 15mOhm @ 30A, 5V 2.5V @ 7mA 11 nC @ 5 V +6V, -4V 1000 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-FSMD-B
FF1700XTR17IE5DBPSA1 Infineon Technologies electronic component

FF1700XTR17IE5DBPSA1

PP IHM I

Infineon Technologies

2
RFQ

Datasheet

- - Tray Active - - - - - - - - - - - - - - - - -
NVXR22S90M2SPM onsemi electronic component

NVXR22S90M2SPM

SIC 900V 6D MOSFET V-SSDC SPM

onsemi

4
RFQ

-

- - Bulk Active - - - - - - - - - - - - - - - - -
2N7002 Shenzhen Slkormicro Semicon Co., Ltd. electronic component

2N7002

60V 115MA 7.5@10V,500MA 225MW N

Shenzhen Slkormicro Semicon Co., Ltd.

212
RFQ

-

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 115mA 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 225mW 150°C (TJ) - - Surface Mount SOT-23
BSS138 EVVO electronic component

BSS138

MOSFET N-CH 50V 220MA SOT23-3

EVVO

517
RFQ

Datasheet

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) 150°C (TJ) - - Surface Mount SOT-23
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FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
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Q2: Can I request a quotation for FETs, MOSFETs components?
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Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.