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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPDQ60T022S7AXTMA1 Infineon Technologies electronic component

IPDQ60T022S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

 100
RFQ

Datasheet

 		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT040W65G3-4AG STMicroelectronics electronic component

SCT040W65G3-4AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

 75
RFQ

Datasheet

 		* - Tube Active - - - - - - - - - - - - - - - - -
TW083Z65C,S1F Toshiba Semiconductor and Storage electronic component

TW083Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 83

Toshiba Semiconductor and Storage

 88
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 118mOhm @ 15A, 18V 5V @ 600µA 28 nC @ 18 V +25V, -10V 873 pF @ 400 V - 111W (Tc) 175°C - - Through Hole TO-247-4L(X)
APT5015BVFRG Microchip Technology electronic component

APT5015BVFRG

MOSFET N-CH 500V 32A TO247

Microchip Technology

 40
RFQ

Datasheet

 		POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) - 150mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - - - Through Hole TO-247 [B]
DMWSH120H90SM4Q Diodes Incorporated electronic component

DMWSH120H90SM4Q

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

 17
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 15V 97.5mOhm @ 20A, 15V 3.5V @ 5mA 47.6 nC @ 15 V +19V, -8V 1112 pF @ 1000 V - 235W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
AIMCQ120R040M1TXTMA1 Infineon Technologies electronic component

AIMCQ120R040M1TXTMA1

SIC_DISCRETE

Infineon Technologies

 90
RFQ

-

 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 61A (Tc) 18V, 20V 50mOhm @ 20A, 20V 5.1V @ 6.4mA 43 nC @ 20 V +25V, -10V 1264 pF @ 800 V - 341W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPQC60T017S7XTMA1 Infineon Technologies electronic component

IPQC60T017S7XTMA1

HIGH POWER_NEW

Infineon Technologies

 100
RFQ

Datasheet

 		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 113A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.88mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IPDQ60T017S7XTMA1 Infineon Technologies electronic component

IPDQ60T017S7XTMA1

HIGH POWER_NEW

Infineon Technologies

 68
RFQ

Datasheet

 		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 113A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.88mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IPDQ60T017S7AXTMA1 Infineon Technologies electronic component

IPDQ60T017S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

 100
RFQ

Datasheet

 		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPQC60T017S7AXTMA1 Infineon Technologies electronic component

IPQC60T017S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

 100
RFQ

Datasheet

 		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TM3E0039120A Coherent Corp electronic component

TM3E0039120A

SIC MOSFET

Coherent Corp

 90
RFQ

-

 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tray Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A - - - - - - - - - Automotive AEC-Q101 Surface Mount TO-263-7
SCT027H65G3AG STMicroelectronics electronic component

SCT027H65G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

 100
RFQ

Datasheet

 		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AIMCQ120R030M1TXTMA1 Infineon Technologies electronic component

AIMCQ120R030M1TXTMA1

SIC_DISCRETE

Infineon Technologies

 63
RFQ

-

 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 78A (Tc) 18V, 20V 38mOhm @ 27A, 20V 5.1V @ 8.6mA 57 nC @ 20 V +25V, -10V 1738 pF @ 800 V - 417W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
TM3B0039120A Coherent Corp electronic component

TM3B0039120A

SIC MOSFET

Coherent Corp

 90
RFQ

-

 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A - - - - - - - - - Automotive AEC-Q101 Through Hole TO-247-4
MSC040SMA120B4N Microchip Technology electronic component

MSC040SMA120B4N

MOSFET SIC 1200 V 40 MOHM TO-247

Microchip Technology

 60
RFQ

-

 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 71A (Tc) 18V, 20V 50mOhm @ 40A, 20V 5V @ 2mA 137 nC @ 20 V +23V, -10V 1962 pF @ 1000 V - 372W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
TW027Z65C,S1F Toshiba Semiconductor and Storage electronic component

TW027Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 27

Toshiba Semiconductor and Storage

 80
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 58A (Tc) 18V 38mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW060Z120C,S1F Toshiba Semiconductor and Storage electronic component

TW060Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 6

Toshiba Semiconductor and Storage

 88
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 82mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C - - Through Hole TO-247-4L(X)
SCT040W120G3AG STMicroelectronics electronic component

SCT040W120G3AG

HIP-247 IN LINE HEAT SINK 2MM

STMicroelectronics

 100
RFQ

Datasheet

 		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 15V, 18V 54mOhm @ 16A, 18V 4.2V @ 5mA 56 nC @ 18 V +22V, -10V 1329 pF @ 800 V - 312W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole HiP247™
DMWS120H100SM4 Diodes Incorporated electronic component

DMWS120H100SM4

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

 27
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37.2A (Tc) 15V 100mOhm @ 20A, 15V 3.5V @ 5mA 52 nC @ 15 V +19V, -8V 1516 pF @ 1000 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
STW65N023M9-4 STMicroelectronics electronic component

STW65N023M9-4

N-CHANNEL 650 V, 19.9 MOHM TYP.,

STMicroelectronics

 59
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 95A (Tc) 10V 23mOhm @ 48A, 10V 4.2V @ 250µA 230 nC @ 10 V ±30V 8844 pF @ 400 V - 463W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
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FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
This category includes related FETs, MOSFETs subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for FETs, MOSFETs components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.

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