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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FQPF4N90 Fairchild Semiconductor electronic component

FQPF4N90

MOSFET N-CH 900V 2.5A TO220F

Fairchild Semiconductor

744
RFQ

Datasheet

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Tc) 10V 3.3Ohm @ 1.25A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
G2K3N10G Goford Semiconductor electronic component

G2K3N10G

N100V, 2.5A,RD<220M@10V,VTH1V~2V

Goford Semiconductor

1,126
RFQ

Datasheet

TrenchFET® TO-243AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2.5A (Tc) 4.5V, 10V 220mOhm @ 2A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 436 pF @ 50 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-89
SPB10N10LG Infineon Technologies electronic component

SPB10N10LG

N-CHANNEL POWER MOSFET

Infineon Technologies

993
RFQ

-

SIPMOS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 10.3A (Tc) 10V 154mOhm @ 8.1A, 10V 2V @ 21µA 22 nC @ 10 V ±20V 444 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
HUF75321S3S Harris Corporation electronic component

HUF75321S3S

MOSFET N-CH 55V 35A D2PAK

Harris Corporation

991
RFQ

Datasheet

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SPS02N60C3 Infineon Technologies electronic component

SPS02N60C3

MOSFET N-CH 650V 1.8A TO251-3

Infineon Technologies

3,132
RFQ

Datasheet

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
IRFR222 Harris Corporation electronic component

IRFR222

N-CHANNEL POWER MOSFET

Harris Corporation

944
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
IRFW620BTM Fairchild Semiconductor electronic component

IRFW620BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

933
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 16 nC @ 10 V ±30V 390 pF @ 25 V - 3.13W (Ta), 47W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFU222 Harris Corporation electronic component

IRFU222

N-CHANNEL POWER MOSFET

Harris Corporation

900
RFQ

Datasheet

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
IRFU421 Harris Corporation electronic component

IRFU421

N-CHANNEL POWER MOSFET

Harris Corporation

900
RFQ

Datasheet

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
IRFW630BTM_FP001 Fairchild Semiconductor electronic component

IRFW630BTM_FP001

9A, 200V, 0.4OHM, N-CHANNEL

Fairchild Semiconductor

800
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 720 pF @ 25 V - 3.13W (Ta), 72W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFW520ATM Fairchild Semiconductor electronic component

IRFW520ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

774
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFR421 Harris Corporation electronic component

IRFR421

N-CHANNEL POWER MOSFET

Harris Corporation

1,000
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
2SK4100LS Sanyo electronic component

2SK4100LS

N-CHANNEL SILICON MOSFET

Sanyo

958
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
FW705-TL-E Sanyo electronic component

FW705-TL-E

P-CHANNEL SILICON MOSFET

Sanyo

927
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
NDF04N60ZG-001 onsemi electronic component

NDF04N60ZG-001

MOSFET N-CH 600V 4.8A TO-220FP

onsemi

4,930
RFQ

-

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRF9622156 Harris Corporation electronic component

IRF9622156

3A, 200V, 2.4OHM, P-CHANNEL, POW

Harris Corporation

800
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
FDD8880_NL Fairchild Semiconductor electronic component

FDD8880_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

777
RFQ

Datasheet

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 58A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1260 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
IRF614 Harris Corporation electronic component

IRF614

ADVANCED POWER MOSFET

Harris Corporation

695
RFQ

Datasheet

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
FQPF5N30 Fairchild Semiconductor electronic component

FQPF5N30

MOSFET N-CH 300V 3.9A TO220F

Fairchild Semiconductor

1,000
RFQ

Datasheet

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.9A (Tc) 10V 900mOhm @ 1.95A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
IPI80N04S3-06 Infineon Technologies electronic component

IPI80N04S3-06

N-CHANNEL POWER MOSFET

Infineon Technologies

1,000
RFQ

Datasheet

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
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FETs, MOSFETs Electronic Components

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