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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK20N60W,S1VF Toshiba Semiconductor and Storage electronic component

TK20N60W,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage

36
RFQ

Datasheet

DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-247
AIMCQ120R160M1TXTMA1 Infineon Technologies electronic component

AIMCQ120R160M1TXTMA1

SIC_DISCRETE

Infineon Technologies

100
RFQ

-

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 18.6A (Tc) 18V, 20V 200mOhm @ 5A, 20V 5.1V @ 1.5mA 14 nC @ 20 V +25V, -10V 350 pF @ 800 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
SCT055TO65G3 STMicroelectronics electronic component

SCT055TO65G3

SILICON CARBIDE POWER MOSFET 650

STMicroelectronics

88
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AIMCQ120R120M1TXTMA1 Infineon Technologies electronic component

AIMCQ120R120M1TXTMA1

SIC_DISCRETE

Infineon Technologies

100
RFQ

-

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 24A (Tc) 18V, 20V 150mOhm @ 7A, 20V 5.1V @ 2.2mA 18 nC @ 20 V +25V, -10V 458 pF @ 800 V - 161W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IMZC120R078M2HXKSA1 Infineon Technologies electronic component

IMZC120R078M2HXKSA1

IMZC120R078M2HXKSA1

Infineon Technologies

90
RFQ

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 28A (Tc) 15V, 18V 78mOhm @ 9A, 18V 5.1V @ 2.8mA 21 nC @ 18 V +23V, -7V 700 pF @ 800 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
TK31E60W,S1VX Toshiba Semiconductor and Storage electronic component

TK31E60W,S1VX

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage

42
RFQ

Datasheet

DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-220
PSMN1R1-100CSEJ Nexperia USA Inc. electronic component

PSMN1R1-100CSEJ

PSMN1R1-100CSE/SOT8005A/CCPAK1

Nexperia USA Inc.

46
RFQ

Datasheet

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 430A (Tc) 10V 1.09mOhm @ 25A, 10V 3.6V @ 1mA 509 nC @ 10 V ±20V 36460 pF @ 50 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
IPQC60T040S7AXTMA1 Infineon Technologies electronic component

IPQC60T040S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

75
RFQ

-

CoolMOS™ 22-PowerBSOP Module Box Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 780µA 83 nC @ 12 V ±20V 3128 pF @ 300 V - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
TK35N65W5,S1F Toshiba Semiconductor and Storage electronic component

TK35N65W5,S1F

MOSFET N-CH 650V 35A TO247

Toshiba Semiconductor and Storage

30
RFQ

Datasheet

DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TW107Z65C,S1F Toshiba Semiconductor and Storage electronic component

TW107Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 10

Toshiba Semiconductor and Storage

90
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 20A (Tc) 18V 152mOhm @ 10A, 18V 5V @ 1.2mA 21 nC @ 18 V +25V, -10V 600 pF @ 400 V - 76W (Tc) 175°C - - Through Hole TO-247-4L(X)
TK31J60W5,S1VQ Toshiba Semiconductor and Storage electronic component

TK31J60W5,S1VQ

MOSFET N-CH 600V 30.8A TO3P

Toshiba Semiconductor and Storage

30
RFQ

Datasheet

DTMOSIV TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
STW65N045M9-4 STMicroelectronics electronic component

STW65N045M9-4

N-CHANNEL 650 V, 39 MOHM TYP., 5

STMicroelectronics

90
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 45mOhm @ 28A, 10V 4.2V @ 250µA 80 nC @ 10 V ±30V 4610 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
SCT040TO65G3 STMicroelectronics electronic component

SCT040TO65G3

SILICON CARBIDE POWER MOSFET 650

STMicroelectronics

100
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TK62N60W5,S1VF Toshiba Semiconductor and Storage electronic component

TK62N60W5,S1VF

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

30
RFQ

Datasheet

DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 45mOhm @ 30.9A, 10V 4.5V @ 3.1mA 205 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C - - Through Hole TO-247
TW140Z120C,S1F Toshiba Semiconductor and Storage electronic component

TW140Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 14

Toshiba Semiconductor and Storage

65
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 18V 191mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C - - Through Hole TO-247-4L(X)
AIMZH120R080M1TXKSA1 Infineon Technologies electronic component

AIMZH120R080M1TXKSA1

SIC_DISCRETE

Infineon Technologies

17
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +23V, -5V 671 pF @ 800 V - 169W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
IPDQ60T022S7XTMA1 Infineon Technologies electronic component

IPDQ60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

100
RFQ

Datasheet

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPP60R016CM8XKSA1 Infineon Technologies electronic component

IPP60R016CM8XKSA1

IPP60R016CM8XKSA1

Infineon Technologies

23
RFQ

-

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
APT10M19BVRG Microchip Technology electronic component

APT10M19BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology

53
RFQ

Datasheet

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - - - Through Hole TO-247 [B]
IPQC60T022S7AXTMA1 Infineon Technologies electronic component

IPQC60T022S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

100
RFQ

Datasheet

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs Electronic Components

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