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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
S2M0025120J SMC Diode Solutions electronic component

S2M0025120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

 46
RFQ

Datasheet

 		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 70A (Tj) 20V 34mOhm @ 50A, 20V 4V @ 15mA 177 nC @ 20 V +25V, -10V 4150 pF @ 1000 V - 311W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
SCT025H120G3AG STMicroelectronics electronic component

SCT025H120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

 85
RFQ

Datasheet

 		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT018H65G3AG STMicroelectronics electronic component

SCT018H65G3AG

H2PAK-7

STMicroelectronics

 100
RFQ

Datasheet

 		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 27mOhm @ 30A, 18V 4.2V @ 5mA 79.4 nC @ 18 V +22V, -10V 2124 pF @ 400 V - 385W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
S2M0080120N SMC Diode Solutions electronic component

S2M0080120N

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

 36
RFQ

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +20V, -5V 1324 pF @ 1000 V - 176W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
SCT018W65G3-4AG STMicroelectronics electronic component

SCT018W65G3-4AG

TO247-4

STMicroelectronics

 100
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 55A (Tc) 15V, 18V 27mOhm @ 30A, 18V 4.2V @ 5mA 77 nC @ 18 V +22V, -10V 2077 pF @ 400 V - 398W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
SCT025W120G3AG STMicroelectronics electronic component

SCT025W120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

 100
RFQ

Datasheet

 		* - Tube Active - - - - - - - - - - - - - - - - -
SCT025W120G3-4AG STMicroelectronics electronic component

SCT025W120G3-4AG

TO247-4

STMicroelectronics

 75
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 37mOhm @ 25A, 18V 4.2V @ 5mA 73 nC @ 18 V +18V, -5V 1990 pF @ 800 V - 388W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
MSC015SMA070B4N Microchip Technology electronic component

MSC015SMA070B4N

MOSFET SIC 700 V 15 MOHM TO-247-

Microchip Technology

 60
RFQ

-

 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 700 V 112A (Tc) 18V, 20V 19mOhm @ 40A, 20V 5V @ 4mA 215 nC @ 20 V +23V, -10V 4324 pF @ 700 V - 524W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
SCT012W90G3-4AG STMicroelectronics electronic component

SCT012W90G3-4AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

 100
RFQ

-

 * - Tube Active - - - - - - - - - - - - - - - - -
S2M0040120N-1 SMC Diode Solutions electronic component

S2M0040120N-1

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

 36
RFQ

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
SCT011HU75G3AG STMicroelectronics electronic component

SCT011HU75G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

 50
RFQ

Datasheet

 		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
MSC017SMA120B4N Microchip Technology electronic component

MSC017SMA120B4N

MOSFET SIC 1200 V 17 MOHM TO-247

Microchip Technology

 30
RFQ

-

 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 119A (Tc) 18V, 20V 22mOhm @ 40A, 20V 5V @ 4.5mA 194 nC @ 20 V +23V, -10V 4274 pF @ 1200 V - 577W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
MSC025SMA120B4N Microchip Technology electronic component

MSC025SMA120B4N

MOSFET SIC 1200 V 25 MOHM TO-247

Microchip Technology

 30
RFQ

-

 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 113A (Tc) 18V, 20V 31mOhm @ 40A, 20V 5V @ 3mA 232 nC @ 20 V +23V, -10V 3633 pF @ 1000 V - 577W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
S3M0040120N SMC Diode Solutions electronic component

S3M0040120N

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

 36
RFQ

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 65A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 483W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
IXTH1N300P3HV Littelfuse Inc. electronic component

IXTH1N300P3HV

MOSFET N-CH 3000V 1A TO247HV

Littelfuse Inc.

 8
RFQ

Datasheet

 		Polar P3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 3000 V 1A (Tc) 10V 50Ohm @ 500mA, 10V 4V @ 250µA 30.6 nC @ 10 V ±20V 895 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247HV
AIMZHN120R020M1TXKSA1 Infineon Technologies electronic component

AIMZHN120R020M1TXKSA1

SIC_DISCRETE

Infineon Technologies

 30
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 13.7mA 82 nC @ 20 V +23V, -5V 2667 pF @ 800 V - 429W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
DMWSH120H28SM4Q Diodes Incorporated electronic component

DMWSH120H28SM4Q

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

 38
RFQ

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 156.3 nC @ 15 V +19V, -8V - - 429W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
S2M0025120N SMC Diode Solutions electronic component

S2M0025120N

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

 34
RFQ

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 104A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 165 nC @ 20 V +20V, -5V 4054 pF @ 1000 V - 535W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
TM3B0020120A Coherent Corp electronic component

TM3B0020120A

1200V 20MOHM SIC MOSFET TO247-4

Coherent Corp

 40
RFQ

Datasheet

 		- - Tube Active - - - - - - - - - - - - - - - - -
S3M0016120N SMC Diode Solutions electronic component

S3M0016120N

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

 36
RFQ

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 120A (Tc) 18V 23mOhm @ 75A, 18V 4V @ 30mA 287 nC @ 18 V +22V, -8V 5251 pF @ 1000 V - 732W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
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FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
This category includes related FETs, MOSFETs subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for FETs, MOSFETs components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.

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