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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FK4B01120LE Nuvoton Technology Corporation electronic component

FK4B01120LE

SINGLE NCH MOSFET, 12V, 3.9A 17M

Nuvoton Technology Corporation

1,000
RFQ

Datasheet

- 4-XFLGA, CSP Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.5V, 4.5V 24mOhm @ 1.5A, 4.5V 1V @ 394µA 7 nC @ 4.5 V ±8V 490 pF @ 10 V - 370mW (Ta) -40°C ~ 85°C (TA) Automotive AEC-Q101 Surface Mount 4-CSP (1x1)
TK8A65W,S5X Toshiba Semiconductor and Storage electronic component

TK8A65W,S5X

MOSFET N-CH 650V 7.8A TO220SIS

Toshiba Semiconductor and Storage

40
RFQ

Datasheet

DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 650mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK560A60Y,S4X Toshiba Semiconductor and Storage electronic component

TK560A60Y,S4X

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

50
RFQ

Datasheet

DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) - - Through Hole TO-220SIS
DMT4003SCT Diodes Incorporated electronic component

DMT4003SCT

MOSFET N-CH 40V 205A TO220AB

Diodes Incorporated

46
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 205A (Tc) 10V 3mOhm @ 90A, 10V 4V @ 250µA 75.6 nC @ 10 V ±20V 6865 pF @ 20 V - 156W -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
TK5A60D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK5A60D(STA4,Q,M)

MOSFET N-CH 600V 5A TO220SIS

Toshiba Semiconductor and Storage

41
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Ta) 10V 1.43Ohm @ 2.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8A45D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK8A45D(STA4,Q,M)

MOSFET N-CH 450V 8A TO220SIS

Toshiba Semiconductor and Storage

50
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 8A (Ta) 10V 900mOhm @ 4A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK7A55D(STA4,Q,M)

MOSFET N-CH 550V 7A TO220SIS

Toshiba Semiconductor and Storage

45
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 7A (Ta) 10V 1.25Ohm @ 3.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK3A65D(STA4,Q,M)

MOSFET N-CH 650V 3A TO220SIS

Toshiba Semiconductor and Storage

26
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 3A (Ta) 10V 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A65DA(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK5A65DA(STA4,Q,M)

MOSFET N-CH 650V 4.5A TO220SIS

Toshiba Semiconductor and Storage

32
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Ta) 10V 1.67Ohm @ 2.3A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A65D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK5A65D(STA4,Q,M)

MOSFET N-CH 650V 5A TO220SIS

Toshiba Semiconductor and Storage

28
RFQ

-

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Ta) 10V 1.43Ohm @ 2.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
STF80N600K6 STMicroelectronics electronic component

STF80N600K6

N-CHANNEL 800 V, 515 MOHM TYP.,

STMicroelectronics

26
RFQ

Datasheet

ECOPACK® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 100µA 10.7 nC @ 10 V ±30V 540 pF @ 400 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
DMTH4005SCT Diodes Incorporated electronic component

DMTH4005SCT

MOSFET N-CH 40V 100A TO220AB

Diodes Incorporated

50
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.7mOhm @ 50A, 10V 4V @ 250µA 49.1 nC @ 10 V ±20V 3062 pF @ 20 V - 2.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220-3
TK11A50D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK11A50D(STA4,Q,M)

MOSFET N-CH 500V 11A TO220SIS

Toshiba Semiconductor and Storage

50
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Ta) 10V 600mOhm @ 5.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK56E12N1,S1X Toshiba Semiconductor and Storage electronic component

TK56E12N1,S1X

MOSFET N CH 120V 56A TO-220

Toshiba Semiconductor and Storage

52
RFQ

Datasheet

U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 7mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 168W (Tc) 150°C (TJ) - - Through Hole TO-220
TK8Q65W,S1Q Toshiba Semiconductor and Storage electronic component

TK8Q65W,S1Q

MOSFET N-CH 650V 7.8A IPAK

Toshiba Semiconductor and Storage

75
RFQ

Datasheet

DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C (TJ) - - Through Hole IPAK
TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK8A55DA(STA4,Q,M)

MOSFET N-CH 550V 7.5A TO220SIS

Toshiba Semiconductor and Storage

48
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 7.5A (Ta) 10V 1.07Ohm @ 3.8A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK18A30D,S5X Toshiba Semiconductor and Storage electronic component

TK18A30D,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

48
RFQ

Datasheet

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 300 V 18A (Ta) 10V 139mOhm @ 9A, 10V 3.5V @ 1mA 60 nC @ 10 V ±20V 2600 pF @ 100 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK11A45D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK11A45D(STA4,Q,M)

MOSFET N-CH 450V 11A TO220SIS

Toshiba Semiconductor and Storage

43
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 11A (Ta) 10V 620mOhm @ 5.5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5Q60W,S1VQ Toshiba Semiconductor and Storage electronic component

TK5Q60W,S1VQ

MOSFET N CH 600V 5.4A IPAK

Toshiba Semiconductor and Storage

75
RFQ

-

DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
TK7A60W,S4VX Toshiba Semiconductor and Storage electronic component

TK7A60W,S4VX

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

40
RFQ

Datasheet

DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FETs, MOSFETs Electronic Components

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Q1: What products are included in FETs, MOSFETs?
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Q4: Do you support BOM sourcing?
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