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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT50M65JLL Microchip Technology electronic component

APT50M65JLL

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology

20
RFQ

Datasheet

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 29A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
MSC40SM120JCU3 Microchip Technology electronic component

MSC40SM120JCU3

SICFET N-CH 1.2KV 55A SOT227

Microchip Technology

66
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
MSC017SMA120J Microchip Technology electronic component

MSC017SMA120J

MOSFET SIC 1200V 17 MOHM SOT-227

Microchip Technology

17
RFQ

Datasheet

- - Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 88A (Tc) 20V 22mOhm @ 40A, 20V 2.7V @ 4.5mA (Typ) 249 nC @ 20 V +23V, -10V 5280 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) - - - SOT-227
TW015N65C,S1F Toshiba Semiconductor and Storage electronic component

TW015N65C,S1F

G3 650V SIC-MOSFET TO-247 15MOH

Toshiba Semiconductor and Storage

52
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C - - Through Hole TO-247
MSC100SM70JCU3 Microchip Technology electronic component

MSC100SM70JCU3

SICFET N-CH 700V 124A SOT227

Microchip Technology

14
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 124A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 365W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
MSC70SM120JCU2 Microchip Technology electronic component

MSC70SM120JCU2

SICFET N-CH 1.2KV 89A SOT227

Microchip Technology

24
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APT50M50JVFR Microchip Technology electronic component

APT50M50JVFR

MOSFET N-CH 500V 77A ISOTOP

Microchip Technology

6
RFQ

Datasheet

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 77A (Tc) - 50mOhm @ 500mA, 10V 4V @ 5mA 1000 nC @ 10 V - 19600 pF @ 25 V - - - - - Chassis Mount ISOTOP®
MSC130SM120JCU3 Microchip Technology electronic component

MSC130SM120JCU3

SICFET N-CH 1.2KV 173A SOT227

Microchip Technology

18
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 173A (Tc) 20V 16mOhm @ 80A, 20V 2.8V @ 2mA 464 nC @ 20 V +25V, -10V 6040 pF @ 1000 V - 745W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
IXFN70N120SK IXYS electronic component

IXFN70N120SK

SICFET N-CH 1200V 68A SOT227B

IXYS

10
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 161 nC @ 20 V +20V, -5V 2790 pF @ 1000 V - - -40°C ~ 175°C (TJ) - - Chassis Mount SOT-227B
MSCSM120DAM31CTBL1NG Microchip Technology electronic component

MSCSM120DAM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Microchip Technology

23
RFQ

Datasheet

- Module Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
EPC7014UBSH EPC Space, LLC electronic component

EPC7014UBSH

GAN FET HEMT 60V 1A 4UB

EPC Space, LLC

11
RFQ

Datasheet

e-GaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 60 V 1A (Tc) 5V 580mOhm @ 1A, 5V 2.5V @ 140µA - - 22 pF @ 30 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
FBG04N30BSH EPC Space, LLC electronic component

FBG04N30BSH

GAN FET HEMT 40V 30A 4FSMD-B

EPC Space, LLC

13
RFQ

Datasheet

e-GaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 40 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 9mA 11.4 nC @ 5 V +6V, -4V 1300 pF @ 20 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
BSM180C12P3C202 Rohm Semiconductor electronic component

BSM180C12P3C202

SICFET N-CH 1200V 180A MODULE

Rohm Semiconductor

9
RFQ

Datasheet

- Module Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 180A (Tc) - - 5.6V @ 50mA - +22V, -4V 9000 pF @ 10 V - 880W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
TSM2N7002AKCU RFG Taiwan Semiconductor Corporation electronic component

TSM2N7002AKCU RFG

60V, 0.24A, SINGLE N-CHANNEL POW

Taiwan Semiconductor Corporation

130
RFQ

Datasheet

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 4.5V, 10V 2.5Ohm @ 240mA, 10V 2.5V @ 250µA 0.68 nC @ 4.5 V ±20V 30 pF @ 30 V - 298mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
ISP20EP10LMXTSA1 Infineon Technologies electronic component

ISP20EP10LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies

1,000
RFQ

Datasheet

OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 650mA (Ta), 990mA (Tc) 4.5V, 10V 2Ohm @ 600mA, 10V 2V @ 78µA 3.5 nC @ 10 V ±20V 170 pF @ 50 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
NVJS4405NT1G onsemi electronic component

NVJS4405NT1G

MOSFET N-CH 25V 1A SC88

onsemi

687
RFQ

Datasheet

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 1A (Ta) 2.7V, 4.5V 350mOhm @ 600mA, 4.5V 1.5V @ 250µA 1.5 nC @ 4.5 V ±8V 60 pF @ 10 V - 630mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SC-88/SC70-6/SOT-363
DMP2067LVT-7 Diodes Incorporated electronic component

DMP2067LVT-7

MOSFET P-CH 20V 4.2A TSOT26

Diodes Incorporated

420
RFQ

Datasheet

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 45mOhm @ 4.5A, 4.5V 1.5V @ 250µA 28 nC @ 8 V ±8V 1575 pF @ 10 V - 1.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
SSM6K404TU,LF Toshiba Semiconductor and Storage electronic component

SSM6K404TU,LF

MOSFET N-CH 20V 3A UF6

Toshiba Semiconductor and Storage

37
RFQ

Datasheet

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4V 55mOhm @ 2A, 4V 1V @ 1mA 5.9 nC @ 4 V ±10V 400 pF @ 10 V - 500mW (Ta) 150°C - - Surface Mount UF6
SI1480DH-T1-GE3 Vishay Siliconix electronic component

SI1480DH-T1-GE3

MOSFET N-CH 100V 2.6A SC70-6

Vishay Siliconix

955
RFQ

Datasheet

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2.6A (Tc) 4.5V, 10V 200mOhm @ 1.9A, 10V 3V @ 250µA 5 nC @ 10 V ±20V 130 pF @ 50 V - 1.5W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
MCH6353-TL-W onsemi electronic component

MCH6353-TL-W

MOSFET P-CH 12V 6A 6MCPH

onsemi

636
RFQ

Datasheet

- 6-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.5V, 4.5V 35mOhm @ 3A, 4.5V - 12 nC @ 4.5 V ±10V 1250 pF @ 6 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount 6-MCPH
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FETs, MOSFETs Electronic Components

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