FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
NTHL190N65S3HF MOSFET N-CH 650V 20A TO247-3 onsemi	44	RFQ	Datasheet	FRFET®, SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	190mOhm @ 10A, 10V	5V @ 430µA	34 nC @ 10 V	±30V	1610 pF @ 400 V	-	162W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IXFQ28N60P3 MOSFET N-CH 600V 28A TO3P IXYS	63	RFQ	Datasheet	HiPerFET™, Polar3™	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	260mOhm @ 14A, 10V	5V @ 2.5mA	50 nC @ 10 V	±30V	3560 pF @ 25 V	-	695W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
TK28N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	48	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	130mOhm @ 13.8A, 10V	4.5V @ 1.6mA	90 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247
IXTP01N100D MOSFET N-CH 1000V 400MA TO220AB Littelfuse Inc.	90	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	400mA (Tc)	0V	80Ohm @ 50mA, 0V	4.5V @ 25µA	5.8 nC @ 5 V	±20V	100 pF @ 25 V	-	1.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTH180N10T MOSFET N-CH 100V 180A TO247 Littelfuse Inc.	94	RFQ	Datasheet	Trench	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	6.4mOhm @ 25A, 10V	4.5V @ 250µA	151 nC @ 10 V	±30V	6900 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXTP80N075L2 MOSFET N-CH 75V 80A TO220AB Littelfuse Inc.	32	RFQ	Datasheet	Linear L2™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	80A (Tc)	10V	24mOhm @ 40A, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	3600 pF @ 25 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTH120P065T MOSFET P-CH 65V 120A TO247 Littelfuse Inc.	88	RFQ	Datasheet	TrenchP™	TO-247-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	65 V	120A (Tc)	10V	10mOhm @ 500mA, 10V	4V @ 250µA	185 nC @ 10 V	±15V	13200 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
TK31N60W5,S1VF MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	48	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	99mOhm @ 15.4A, 10V	4.5V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
IXFA34N65X3 MOSFET 34A 650V X3 TO263 Littelfuse Inc.	45	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	100mOhm @ 17A, 10V	5.2V @ 2.5mA	29 nC @ 10 V	±20V	2025 pF @ 25 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)
IXTP6N100D2 MOSFET N-CH 1000V 6A TO220AB Littelfuse Inc.	63	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	6A (Tc)	-	2.2Ohm @ 3A, 0V	-	95 nC @ 5 V	±20V	2650 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
MSC080SMA120B4 SICFET N-CH 1200V 37A TO247-4 Microchip Technology	94	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37A (Tc)	20V	100mOhm @ 15A, 20V	2.8V @ 1mA	64 nC @ 20 V	+23V, -10V	838 pF @ 1000 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IXTP86N20X4 MOSFET 200V 86A N-CH ULTRA TO220 Littelfuse Inc.	26	RFQ	Datasheet	Ultra X4	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	86A (Tc)	10V	13mOhm @ 43A, 10V	4.5V @ 250µA	70 nC @ 10 V	±20V	2250 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220
MSC060SMA070B SICFET N-CH 700V 39A TO247-3 Microchip Technology	79	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	39A (Tc)	20V	75mOhm @ 20A, 20V	2.4V @ 1mA	56 nC @ 20 V	+23V, -10V	1175 pF @ 700 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IXFH48N60X3 MOSFET ULTRA JCT 600V 48A TO247 Littelfuse Inc.	58	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	65mOhm @ 24A, 10V	5V @ 2.5mA	38 nC @ 10 V	±20V	2730 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
TW107N65C,S1F G3 650V SIC-MOSFET TO-247 107MO Toshiba Semiconductor and Storage	68	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	145mOhm @ 10A, 18V	5V @ 1.2mA	21 nC @ 18 V	+25V, -10V	600 pF @ 400 V	-	76W (Tc)	175°C	-	-	Through Hole	TO-247
TK39A60W,S4VX MOSFET N-CH 600V 38.8A TO220SIS Toshiba Semiconductor and Storage	54	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	110 nC @ 10 V	±30V	4100 pF @ 300 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
NTH4L060N090SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	33	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V, 18V	43mOhm @ 20A, 18V	4.3V @ 5mA	87 nC @ 15 V	+22V, -8V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
MSC060SMA070S SICFET N-CH 700V 37A D3PAK Microchip Technology	92	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	37A (Tc)	20V	75mOhm @ 20A, 20V	2.4V @ 1mA (Typ)	56 nC @ 20 V	+23V, -10V	1175 pF @ 700 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
APT1204R7BFLLG MOSFET N-CH 1200V 3.5A TO247 Microchip Technology	43	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	3.5A (Tc)	10V	4.7Ohm @ 1.75A, 10V	5V @ 1mA	31 nC @ 10 V	±30V	715 pF @ 25 V	-	135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
IXFH86N30T MOSFET N-CH 300V 86A TO247AD Littelfuse Inc.	6	RFQ	Datasheet	HiPerFET™, Trench	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	86A (Tc)	10V	43mOhm @ 43A, 10V	5V @ 4mA	180 nC @ 10 V	±20V	11300 pF @ 25 V	-	860W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)

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FETs, MOSFETs Electronic Components

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