FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT29F100B2 MOSFET N-CH 1000V 30A T-MAX Microchip Technology	11	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	30A (Tc)	10V	440mOhm @ 16A, 10V	5V @ 2.5mA	260 nC @ 10 V	±30V	8500 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
TW060N120C,S1F G3 1200V SIC-MOSFET TO-247 60MO Toshiba Semiconductor and Storage	15	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	78mOhm @ 18A, 18V	5V @ 4.2mA	46 nC @ 18 V	+25V, -10V	1530 pF @ 800 V	-	170W (Tc)	175°C	-	-	Through Hole	TO-247
GP2T040A120H SIC MOSFET 1200V 40M TO-247-4L SemiQ	60	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	118 nC @ 20 V	+25V, -10V	3192 pF @ 1000 V	-	322W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
APT106N60LC6 MOSFET N-CH 600V 106A TO264 Microchip Technology	38	RFQ	Datasheet	CoolMOS™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	106A (Tc)	10V	35mOhm @ 53A, 10V	3.5V @ 3.4mA	308 nC @ 10 V	±20V	8390 pF @ 25 V	-	833W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (L)
APT48M80L MOSFET N-CH 800V 49A TO264 Microchip Technology	82	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	49A (Tc)	10V	200mOhm @ 24A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9330 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
APT10078BLLG MOSFET N-CH 1000V 14A TO247 Microchip Technology	30	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	14A (Tc)	10V	780mOhm @ 7A, 10V	5V @ 1mA	95 nC @ 10 V	±30V	2525 pF @ 25 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
TW027N65C,S1F G3 650V SIC-MOSFET TO-247 27MOH Toshiba Semiconductor and Storage	35	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	37mOhm @ 29A, 18V	5V @ 3mA	65 nC @ 18 V	+25V, -10V	2288 pF @ 400 V	-	156W (Tc)	175°C	-	-	Through Hole	TO-247
APT28M120B2 MOSFET N-CH 1200V 29A T-MAX Microchip Technology	56	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	29A (Tc)	10V	560mOhm @ 14A, 10V	5V @ 2.5mA	300 nC @ 10 V	±30V	9670 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT10050LVRG MOSFET N-CH 1000V 21A TO264 Microchip Technology	25	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	500mOhm @ 500mA, 10V	4V @ 2.5mA	500 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
MSC040SMA120B SICFET N-CH 1200V 66A TO247-3 Microchip Technology	35	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	66A (Tc)	20V	50mOhm @ 40A, 20V	2.7V @ 2mA	137 nC @ 20 V	+23V, -10V	1990 pF @ 1000 V	-	323W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
GCMX080B120S1-E1 SIC 1200V 80M MOSFET SOT-227 SemiQ	48	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1336 pF @ 1000 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
MSC040SMA120S SICFET N-CH 1200V 64A TO268 Microchip Technology	12	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	64A (Tc)	20V	50mOhm @ 40A, 20V	2.6V @ 2mA	137 nC @ 20 V	+23V, -10V	1990 pF @ 1000 V	-	303W	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
GCMS080B120S1-E1 SIC 1200V 80M MOSFET & 10A SBD S SemiQ	37	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1374 pF @ 1000 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
TW030N120C,S1F G3 1200V SIC-MOSFET TO-247 30MO Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	40mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	-	-	Through Hole	TO-247
IXTN40P50P MOSFET P-CH 500V 40A SOT227B Littelfuse Inc.	64	RFQ	Datasheet	PolarP™	SOT-227-4, miniBLOC	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	40A (Tc)	10V	230mOhm @ 500mA, 10V	4V @ 1mA	205 nC @ 10 V	±20V	11500 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
APT5010JVR MOSFET N-CH 500V 44A ISOTOP Microchip Technology	12	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	-	100mOhm @ 500mA, 10V	4V @ 2.5mA	470 nC @ 10 V	-	8900 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
APT5010JVFR MOSFET N-CH 500V 44A ISOTOP Microchip Technology	20	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	-	100mOhm @ 500mA, 10V	4V @ 2.5mA	470 nC @ 10 V	-	8900 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
MSC035SMA170S MOSFET SIC 1700V 35 MOHM TO-268 Microchip Technology	23	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	59A (Tc)	20V	45mOhm @ 30A, 20V	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	+23V, -10V	3300 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
IXFN170N30P MOSFET N-CH 300V 138A SOT-227B Littelfuse Inc.	7	RFQ	Datasheet	HiPerFET™, Polar	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	138A (Tc)	10V	18mOhm @ 85A, 10V	4.5V @ 1mA	258 nC @ 10 V	±20V	20000 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
MMIX1F420N10T MOSFET N-CH 100V 334A 24SMPD IXYS	60	RFQ	Datasheet	GigaMOS™, HiPerFET™, TrenchT2™	24-PowerSMD, 21 Leads	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	334A (Tc)	10V	2.6mOhm @ 60A, 10V	5V @ 8mA	670 nC @ 10 V	±20V	4700 pF @ 10 V	-	680W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	24-SMPD

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FETs, MOSFETs Electronic Components

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