FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK17A80W,S4X MOSFET N-CH 800V 17A TO220SIS Toshiba Semiconductor and Storage	91	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK25A60X,S5X MOSFET N-CH 600V 25A TO220SIS Toshiba Semiconductor and Storage	34	RFQ	Datasheet	DTMOSIV-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	125mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40 nC @ 10 V	±30V	2400 pF @ 300 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
RCX700N20 MOSFET N-CH 200V 70A TO220FM Rohm Semiconductor	40	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	70A (Tc)	10V	42.7mOhm @ 35A, 10V	5V @ 1mA	125 nC @ 10 V	±30V	6900 pF @ 25 V	-	2.23W (Ta), 40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FM
TK110E65Z,S1X 650V DTMOS VI TO-220 110MOHM Toshiba Semiconductor and Storage	50	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	190W (Tc)	150°C	-	-	Through Hole	TO-220
STW7NK90Z MOSFET N-CH 900V 5.8A TO247-3 STMicroelectronics	54	RFQ	Datasheet	SuperMESH™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	5.8A (Tc)	10V	2Ohm @ 2.9A, 10V	4.5V @ 100µA	60.5 nC @ 10 V	±30V	1350 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IXTA1N120P MOSFET N-CH 1200V 1A TO263 Littelfuse Inc.	94	RFQ	Datasheet	Polar	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	1A (Tc)	10V	20Ohm @ 500mA, 10V	4.5V @ 50µA	17.6 nC @ 10 V	±20V	550 pF @ 25 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
IPW60R160C6FKSA1 MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies	56	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1
CSD19505KTTT MOSFET N-CH 80V 200A DDPAK Texas Instruments	117	RFQ	Datasheet	NexFET™	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	200A (Ta)	6V, 10V	3.1mOhm @ 100A, 10V	3.2V @ 250µA	76 nC @ 10 V	±20V	7920 pF @ 40 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (DDPAK-3)
TK17E80W,S1X MOSFET N-CHANNEL 800V 17A TO220 Toshiba Semiconductor and Storage	44	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	180W (Tc)	150°C	-	-	Through Hole	TO-220
APT30F50B MOSFET N-CH 500V 30A TO247 Microchip Technology	95	RFQ	Datasheet	POWER MOS 8™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	10V	190mOhm @ 14A, 10V	5V @ 1mA	115 nC @ 10 V	±30V	4525 pF @ 25 V	-	415W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
IXFP5N100P MOSFET N-CH 1000V 5A TO220AB IXYS	26	RFQ	Datasheet	HiPerFET™, Polar	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	5A (Tc)	10V	2.8Ohm @ 500mA, 10V	6V @ 250µA	33.4 nC @ 10 V	±30V	1830 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
STF15NM65N MOSFET N-CH 650V 12A TO220FP STMicroelectronics	84	RFQ	Datasheet	MDmesh™ II	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	33.3 nC @ 10 V	±25V	983 pF @ 50 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
TK090E65Z,S1X 650V DTMOS VI TO-220 90MOHM Toshiba Semiconductor and Storage	61	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-220
APT9M100S MOSFET N-CH 1000V 9A D3PAK Microchip Technology	47	RFQ	Datasheet	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	9A (Tc)	10V	1.4Ohm @ 5A, 10V	5V @ 1mA	80 nC @ 10 V	±30V	2605 pF @ 25 V	-	335W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D3PAK
TK20J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	33	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C	-	-	Through Hole	TO-3P(N)
IRFP064PBF MOSFET N-CH 60V 70A TO247-3 Vishay Siliconix	69	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	70A (Tc)	10V	9mOhm @ 78A, 10V	4V @ 250µA	190 nC @ 10 V	±20V	7400 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
TK31E60X,S1X MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	87	RFQ	Datasheet	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK31N60X,S1F MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	26	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK090N65Z,S1F MOSFET N-CH 650V 30A TO247 Toshiba Semiconductor and Storage	26	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247
IPA075N15N3GXKSA1 MOSFET N-CH 150V 43A TO220-3 Infineon Technologies	61	RFQ	Datasheet	OptiMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	43A (Tc)	8V, 10V	7.5mOhm @ 43A, 10V	4V @ 270µA	93 nC @ 10 V	±20V	7280 pF @ 75 V	-	39W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP

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FETs, MOSFETs Electronic Components

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