FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXFH50N50P3 MOSFET N-CH 500V 50A TO247AD IXYS	76	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	50A (Tc)	10V	120mOhm @ 25A, 10V	5V @ 4mA	85 nC @ 10 V	±30V	4335 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
TK62N60X,S1F MOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage	82	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK49N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	57mOhm @ 24.6A, 10V	4.5V @ 2.5mA	185 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
TK39J60W5,S1VQ MOSFET N-CH 600V 38.8A TO3P Toshiba Semiconductor and Storage	31	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	135 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
IMZA65R039M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	83	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A (Tc)	18V	50mOhm @ 25A, 18V	5.7V @ 7.5mA	41 nC @ 18 V	+20V, -2V	1393 pF @ 400 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-3
TK31Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	26	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
TK49N65W,S1F PB-F POWER MOSFET TRANSISTOR TO2 Toshiba Semiconductor and Storage	6	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	55mOhm @ 24.6A, 10V	3.5V @ 2.5mA	160 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
APT20M38BVRG MOSFET N-CH 200V 67A TO247 Microchip Technology	44	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	67A (Tc)	10V	38mOhm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	±30V	6120 pF @ 25 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
APT56F50B2 MOSFET N-CH 500V 56A T-MAX Microchip Technology	58	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	56A (Tc)	10V	100mOhm @ 28A, 10V	5V @ 2.5mA	220 nC @ 10 V	±30V	8800 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
IXTQ88N30P MOSFET N-CH 300V 88A TO3P Littelfuse Inc.	43	RFQ	Datasheet	Polar	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	88A (Tc)	10V	40mOhm @ 44A, 10V	5V @ 250µA	180 nC @ 10 V	±20V	6300 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
MSC080SMA120S SICFET N-CH 1200V 35A D3PAK Microchip Technology	24	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A	20V	100mOhm @ 15A, 20V	2.8V @ 1mA	64 nC @ 20 V	+23V, -10V	838 pF @ 1000 V	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
IXTT48P20P MOSFET P-CH 200V 48A TO268 Littelfuse Inc.	92	RFQ	Datasheet	PolarP™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	85mOhm @ 500mA, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	5400 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
IXFX98N50P3 MOSFET N-CH 500V 98A PLUS247-3 Littelfuse Inc.	64	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	98A (Tc)	10V	50mOhm @ 500mA, 10V	5V @ 8mA	197 nC @ 10 V	±30V	13100 pF @ 25 V	-	1300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
APT5014BLLG MOSFET N-CH 500V 35A TO247 Microchip Technology	41	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	35A (Tc)	10V	140mOhm @ 17.5A, 10V	5V @ 1mA	72 nC @ 10 V	±30V	3261 pF @ 25 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
MSC035SMA070S MOSFET N-CH 700V D3PAK Microchip Technology	68	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	65A (Tc)	20V	44mOhm @ 30A, 20V	2.7V @ 1mA	99 nC @ 20 V	+23V, -10V	2010 pF @ 700 V	-	206W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
APT106N60B2C6 MOSFET N-CH 600V 106A T-MAX Microchip Technology	38	RFQ	Datasheet	CoolMOS™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	106A (Tc)	10V	35mOhm @ 53A, 10V	3.5V @ 3.4mA	308 nC @ 10 V	±20V	8390 pF @ 25 V	-	833W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
TW048N65C,S1F G3 650V SIC-MOSFET TO-247 48MOH Toshiba Semiconductor and Storage	29	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	18V	65mOhm @ 20A, 18V	5V @ 1.6mA	41 nC @ 18 V	+25V, -10V	1362 pF @ 400 V	-	132W (Tc)	175°C	-	-	Through Hole	TO-247
TK62Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	11	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
APT5010LVRG MOSFET N-CH 500V 47A TO264 Microchip Technology	19	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	47A (Tc)	-	100mOhm @ 500mA, 10V	4V @ 2.5mA	470 nC @ 10 V	-	8900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
IXTT40N50L2 MOSFET N-CH 500V 40A TO268 Littelfuse Inc.	47	RFQ	Datasheet	Linear L2™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	40A (Tc)	10V	170mOhm @ 20A, 10V	4.5V @ 250µA	320 nC @ 10 V	±20V	10400 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA

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FETs, MOSFETs Electronic Components

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