Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SICR101200 DIODE SIL CARB 1.2KV 10A TO220AC SMC Diode Solutions	8,722	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	640pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STTH3010WY DIODE GEN PURP 1KV 30A DO247-2 STMicroelectronics	9,611	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 1000 V	-	Automotive	AEC-Q101	Through Hole	-	-40°C ~ 175°C
D8015L56TP DIODE GP 800V 9.5A ITO220AB Littelfuse Inc.	3,887	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	800 V	9.5A	1.6 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	20 µA @ 800 V	-	-	-	Through Hole	ITO-220AB	-40°C ~ 125°C
STPSC10H065D 650 V 10 A power Schottky silico STMicroelectronics	4,606	RFQ	Datasheet	-	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
TRS8A65F,S1Q DIODE SIL CARBIDE 650V 8A TO220F Toshiba Semiconductor and Storage	1	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	28pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
STPSC12065G-TR DIODE SIL CARBIDE 650V 12A D2PAK STMicroelectronics	9,367	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
DHG5I600PM DIODE GEN PURP 600V 5A TO220ACFP IXYS	7,018	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	5A	2.2 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220ACFP	-55°C ~ 150°C
STTH60P03SW DIODE GEN PURP 300V 60A TO247-3 STMicroelectronics	7	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	300 V	60A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 300 V	-	-	-	Through Hole	TO-247-3	175°C (Max)
DHG20I1200HA DIODE GEN PURP 1.2KV 20A TO247 IXYS	6	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	20A	2.24 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 1200 V	-	-	-	Through Hole	TO-247	-55°C ~ 150°C
DSI45-08A DIODE GEN PURP 800V 45A TO247AD IXYS	4,990	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	800 V	45A	1.28 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	20 µA @ 800 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 175°C
DSC02120FP DIODE SIL CARB 1.2KV 2A ITO220AC Diodes Incorporated	24	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	128 µA @ 1200 V	132pF @ 100mV, 1MHz	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
GP3D010A120A DIODE SIL CARB 1.2KV 10A TO220-2 SemiQ	6	RFQ	Datasheet	Amp+™	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	608pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
SCS215AGC17 DIODE SIC 650V 15A TO220ACFP Rohm Semiconductor	9,898	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
1N5622 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	8,521	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1000 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
AIDK10S65C5ATMA1 DISCRETE DIODES Infineon Technologies	2,909	RFQ	Datasheet	CoolSiC™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	303pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	PG-TO263-2	-40°C ~ 175°C
VS-APH3006-N3 DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	2,985	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	2.65 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
SCS212AGC17 DIODE SIC 650V 12A TO220ACFP Rohm Semiconductor	4,198	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
GP3D015A120A DIODE SIL CARB 1.2KV 15A TO220-2 SemiQ	10	RFQ	Datasheet	Amp+™	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	962pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DSC05120FP DIODE SIL CARB 1.2KV 5A ITO220AC Diodes Incorporated	2,034	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 1200 V	318pF @ 100mV, 1MHz	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
STTH3006DPI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	3,576	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	30A	3.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	40 µA @ 600 V	-	-	-	Through Hole	DOP3I	150°C (Max)

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Single Diodes Electronic Components

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