Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-16F60 DIODE GEN PURP 600V 16A DO203AA Vishay General Semiconductor - Diodes Division	6,489	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
DHG30I600PA DIODE GEN PURP 600V 30A TO220AC IXYS	5,302	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	2.37 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
STTH30ACS06W DIODE GEN PURP 600V 30A TO247-2 STMicroelectronics	5,042	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	30A	2.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	5 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
STTH15RQ06WY DIODE GEN PURP 600V 15A DO247 STMicroelectronics	8	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	15A	2.95 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
VS-25F60 DIODE GEN PURP 600V 25A DO203AA Vishay General Semiconductor - Diodes Division	7,306	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
STTH15RQ06W DIODE GEN PURP 600V 15A DO247 STMicroelectronics	3,405	RFQ	Datasheet	ECOPACK®	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	15A	2.95 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
VS-65APF12LHM3 DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division	9,107	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1200 V	65A	1.42 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-65EPF06LHM3 DIODE GEN PURP 600V 65A TO247AD Vishay General Semiconductor - Diodes Division	9,321	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	65A	1.32 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
STPSC4H065DI DIODE SIC 650V 4A TO220AC INS STMicroelectronics	9,283	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.75 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 650 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
VS-25F80 DIODE GEN PURP 800V 25A DO203AA Vishay General Semiconductor - Diodes Division	8,454	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
STPSC6H065G-TR DIODE SIL CARBIDE 650V 6A D2PAK STMicroelectronics	4,420	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STPSC4H065DLF DIODE SIL CARB 650V 4A POWERFLAT STMicroelectronics	2,739	RFQ	Datasheet	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.55 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	245pF @ 0V, 1MHz	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
STPSC8H065G-TR DIODE SIL CARBIDE 650V 8A D2PAK STMicroelectronics	6,436	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	414pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
TRS6E65F,S1Q DIODE SIL CARB 650V 6A TO220-2L Toshiba Semiconductor and Storage	5,964	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.6 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	22pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS6A65F,S1Q DIODE SIL CARBIDE 650V 6A TO220F Toshiba Semiconductor and Storage	8,513	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.6 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	22pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
STTH30RQ06WL DIODE GEN PURP 600V 30A DO247 LL STMicroelectronics	19	RFQ	Datasheet	ECOPACK®2	TO-247-2	Tube	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	-	-	Through Hole	DO-247 LL	175°C (Max)
SICU02120B-TP DIODE SIL CARBIDE 1.2KV 2A DPAK Micro Commercial Co	6,672	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	-	10 µA @ 1200 V	140pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
STPSC8H065G2Y-TR DIODE SIL CARB 650V 8A D2PAK HV STMicroelectronics	5,822	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.65 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	414pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
STTH30S12W DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	7,093	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	30A	2.9 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	15 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
DSEP30-12B DIODE GEN PURP 1.2KV 30A TO247 IXYS	8,000	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	3.75 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	12pF @ 600V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C

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Single Diodes Electronic Components

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