Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STTH15RQ06D DIODE GEN PURP 600V 15A TO220AC STMicroelectronics	8,287	RFQ	Datasheet	ECOPACK®	TO-220-2	Tube	Active	Standard	600 V	15A	2.95 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
VS-E5PH7506LHN3 DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division	5,346	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	75A	1.7 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	57 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PX7506LHN3 DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division	7,868	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	75A	2.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	48 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-45EPF06LHM3 DIODE GEN PURP 600V 45A TO247AD Vishay General Semiconductor - Diodes Division	5,302	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	45A	1.31 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
VS-65APS12LHM3 DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division	8,905	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1200 V	65A	1.12 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-12FR20 DIODE GEN PURP 200V 12A DO203AA Vishay General Semiconductor - Diodes Division	2,623	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
TRS8E65F,S1Q DIODE SIL CARB 650V 8A TO220-2L Toshiba Semiconductor and Storage	8,401	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	28pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
STTH810GY-TR DIODE GEN PURP 1KV 8A D2PAK STMicroelectronics	8,134	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1000 V	8A	2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	5 µA @ 1000 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
VS-45EPF12LHM3 DIODE GEN PURP 1.2KV 45A TO247AD Vishay General Semiconductor - Diodes Division	5,470	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	45A	1.44 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
VS-30APF10-M3 DIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division	8,946	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1000 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
STTH15R06FP DIODE GP 600V 15A TO220FPAC STMicroelectronics	2,320	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	15A	2.9 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	60 µA @ 600 V	-	-	-	Through Hole	TO-220FPAC	175°C (Max)
VS-40EPS16-M3 DIODE GP 1.6KV 40A TO247AC Vishay General Semiconductor - Diodes Division	6,765	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	40A	1.14 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-65APS16LHM3 DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division	8,866	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-HFA06PB120-N3 DIODE GP 1.2KV 6A TO247AC Vishay General Semiconductor - Diodes Division	6,033	RFQ	Datasheet	HEXFRED®	TO-247-2	Tube	Active	Standard	1200 V	6A	3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	5 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
DSA1-12D DIODE AVALANCHE 1.2KV 2.3A IXYS	9,568	RFQ	Datasheet	-	Radial	Box	Active	Avalanche	1200 V	2.3A	1.34 V @ 7 A	Standard Recovery >500ns, > 200mA (Io)	-	700 µA @ 1200 V	-	-	-	Through Hole	-	-40°C ~ 150°C
TRS10E65F,S1Q DIODE SIL CARB 650V 10A TO220-2L Toshiba Semiconductor and Storage	3,742	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS10A65F,S1Q DIODE SIL CARB 650V 10A TO220F Toshiba Semiconductor and Storage	4,007	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
IDWD10G120C5XKSA1 DIODE SIL CARB 1.2KV 34A TO247-2 Infineon Technologies	6,810	RFQ	Datasheet	CoolSiC™+	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	34A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-2	-55°C ~ 175°C
TRS4A65F,S1Q DIODE SIL CARBIDE 650V 4A TO220F Toshiba Semiconductor and Storage	4,029	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	16pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
TRS12E65F,S1Q DIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage	5,715	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	65pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)

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Single Diodes Electronic Components

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