Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
WNSC2D10650TJ DIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors	890	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C
WNSC2D10650WQ DIODE SIL CARB 650V 10A TO247-2 WeEn Semiconductors	517	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
STTH806D DIODE GEN PURP 600V 8A TO220AC STMicroelectronics	3,924	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Standard	600 V	8A	1.85 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	8 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
IDK12G65C5XTMA1 DIODE SIL CARB 650V 12A TO263-2 Infineon Technologies	9,817	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	2.1 mA @ 650 V	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
VS-10ETF10-M3 DIODE GEN PURP 1KV 10A TO220AC Vishay General Semiconductor - Diodes Division	4,509	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1000 V	10A	1.33 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	310 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
RURU5050 DIODE AVALANCHE 500V 50A TO218 Harris Corporation	580	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	500 V	50A	1.6 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	500 µA @ 500 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
PCDB0465G1_R2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,400	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	146pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
NRVB120ESFT1G DIODE SCHOTTKY 20V 1A SOD123FL onsemi	7,643	RFQ	Datasheet	-	SOD-123F	Tape & Reel (TR)	Obsolete	Schottky	20 V	1A	530 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 20 V	-	-	-	Surface Mount	SOD-123FL	-65°C ~ 150°C
S6D10065L 650V, 10A, DFN88, SIC SCHOTTKY D SMC Diode Solutions	833	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
RHRU50100 DIODE AVALANCHE 1KV 50A TO218 Harris Corporation	280	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	1000 V	50A	3 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	500 µA @ 1000 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
SICR10650CT DIODE SIL CARB 650V 5A TO220AB SMC Diode Solutions	225	RFQ	Datasheet	-	TO-220-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-	-	-	Through Hole	TO-220AB	-55°C ~ 175°C
SICRF5650 DIODE SIL CARB 650V 5A ITO220AC SMC Diode Solutions	224	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
SICR5650 DIODE SIL CARB 650V 5A TO220AC SMC Diode Solutions	158	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
MUR6060BS-BP DIODE GEN PURP 600V 60A TO247AD Micro Commercial Co	1,680	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	200pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
BYC75W-600PT2Q DIODE GEN PURP 600V 75A TO247-2 WeEn Semiconductors	508	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	75A	2.75 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C
WNSC6D16650CW6Q DIODE SIL CARB 650V 16A TO247-3 WeEn Semiconductors	3,000	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	175°C
MUR6060BH-BP DIODE GEN PURP 600V 60A TO247AD Micro Commercial Co	1,798	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	2.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	10 µA @ 600 V	400pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
NRVBB4030T4G DIODE SCHOTTKY 30V 40A D2PAK onsemi	6,765	RFQ	Datasheet	SWITCHMODE™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	30 V	40A	550 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 30 V	-	-	-	Surface Mount	D2PAK	-65°C ~ 175°C
PCDP0465G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,996	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	146pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
FFSD0465A DIODE SIL CARB 650V 7.6A DPAK onsemi	2,442	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	7.6A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C

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Single Diodes Electronic Components

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